Findings in Electronics Reported from Dongguk University (Low-Frequency Noise-Based Mechanism Analysis of Endurance Degradation in Al/aTiO [ [x] ] /Al Resistive Random Access Memory Devices)

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• Research output

• Low-Frequency Noise-Based Mechanism Analysis of Endurance Degradation in Al/αTiO_x/Al Resistive Random Access Memory Devices

  Research output: Contribution to journal › Article › peer-review