Research Data from Dongguk University Update Understanding of Hafnia (Ferroelectric domain relaxation enables reliable multi-bit storage in hafnia-based memristors)

Media coverage

• Title	Research Data from Dongguk University Update Understanding of Hafnia (Ferroelectric domain relaxation enables reliable multi-bit storage in hafnia-based memristors)
  Media name/outlet	South Korea Daily Report
  Country/Territory	United States
  Date	21/01/26
  Persons	Sung Jun Kim