A 0.026 mm2 time domain cmos temperature sensor with simple current source

Sangwoo Park, Sangjin Byun

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

This paper presents a time domain CMOS temperature sensor with a simple current source. This sensor chip only occupies a small active die area of 0.026 mm2 because it adopts a simple current source consisting of an n-type poly resistor and a PMOS transistor and a simple current controlled oscillator consisting of three current starved inverter delay cells. Although this current source is based on a simple architecture, it has better temperature linearity than the conventional approach that generates a temperature-dependent current through a poly resistor using a feedback loop. This temperature sensor is designed in a 0.18 µm 1P6M CMOS process. In the post-layout simulations, the temperature error was measured within a range from −1.0 to +0.7 C over the temperature range of 0 to 100 C after two point calibration was carried out at 20 and 80 C, respectively. The temperature resolution was set as 0.32 C and the temperature to digital conversion rate was 50 kHz. The energy efficiency is 1.4 nJ/sample and the supply voltage sensitivity is 0.077 C/mV at 27 C while the supply voltage varies from 1.65 to 1.95 V.

Original languageEnglish
Article number899
JournalMicromachines
Volume11
Issue number10
DOIs
StatePublished - Oct 2020

Keywords

  • CMOS integrated circuits
  • Poly resistor
  • Temperature error
  • Temperature sensor
  • Threshold voltage
  • Time domain

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