Abstract
An ultra-wideband low noise amplifier (LNA) is presented in 65 nm CMOS. In order to obtain ultra-wide bandwidth, a compact inter-stage network utilizing one transformer and a de-Q-ing resistor is presented. The proposed LNA achieves maximum power gain of 18.21 dB over an ultrawideband of 1-13 GHz, the measured minimum noise figure (NF) of 5.28 dB and an input 1-dB compression point (IP1dB) of -21.43 dBm. The implemented LNA occupies 0.52mm2 of the active area excluding pads, and it draws 14.92mW from 1.2V power supply.
| Original language | English |
|---|---|
| Article number | 20171019 |
| Journal | IEICE Electronics Express |
| Volume | 15 |
| Issue number | 2 |
| DOIs | |
| State | Published - 1 Jan 2018 |
Keywords
- CMOS
- LNA
- Transformer
- Ultra-wideband
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