A +3-dBm-EIRP 240-GHz Circular-Polarized Radiator Utilizing a Sub-THz PA in 65-nm CMOS

Van Son Trinh; Hsiang Nerng Chen; Jung Dong Park

doi:10.1109/LMWC.2020.2975111

A +3-dBm-EIRP 240-GHz Circular-Polarized Radiator Utilizing a Sub-THz PA in 65-nm CMOS

Van Son Trinh, Hsiang Nerng Chen, Jung Dong Park

Department of Electronics & Electrical Engineering

Dongguk University

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We present a circular-polarized radiator in a 65-nm CMOS with a measured equivalent isotropically radiated power (EIRP) of +3 dBm at 239.2 GHz. To boost the radiating power, the subterahertz signal generated from a tripler is enhanced by a fundamental driving amplifier before being fed to an on-chip two-array patch antenna for circular-polarized radiation. A W -band voltage-controlled oscillator (VCO) was codesigned with a push-pull driver to optimize the output power and efficiency. Using the frequency-tuning capability of the W -band VCO, the output frequency was precisely tuned to 239.2 GHz, which provided the maximum output power of +0.5 dBm. The fabricated radiator occupies the chip area of 1.44 mm², and it consumes dc power of 272 mW under a 1.2-V supply.

Original language	English
Article number	9011593
Pages (from-to)	399-402
Number of pages	4
Journal	IEEE Microwave and Wireless Components Letters
Volume	30
Issue number	4
DOIs	https://doi.org/10.1109/LMWC.2020.2975111
State	Published - Apr 2020

Keywords

CMOS
radiator
subterahertz (sub-THz)

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abstract = "We present a circular-polarized radiator in a 65-nm CMOS with a measured equivalent isotropically radiated power (EIRP) of +3 dBm at 239.2 GHz. To boost the radiating power, the subterahertz signal generated from a tripler is enhanced by a fundamental driving amplifier before being fed to an on-chip two-array patch antenna for circular-polarized radiation. A W -band voltage-controlled oscillator (VCO) was codesigned with a push-pull driver to optimize the output power and efficiency. Using the frequency-tuning capability of the W -band VCO, the output frequency was precisely tuned to 239.2 GHz, which provided the maximum output power of +0.5 dBm. The fabricated radiator occupies the chip area of 1.44 mm2, and it consumes dc power of 272 mW under a 1.2-V supply.",

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AB - We present a circular-polarized radiator in a 65-nm CMOS with a measured equivalent isotropically radiated power (EIRP) of +3 dBm at 239.2 GHz. To boost the radiating power, the subterahertz signal generated from a tripler is enhanced by a fundamental driving amplifier before being fed to an on-chip two-array patch antenna for circular-polarized radiation. A W -band voltage-controlled oscillator (VCO) was codesigned with a push-pull driver to optimize the output power and efficiency. Using the frequency-tuning capability of the W -band VCO, the output frequency was precisely tuned to 239.2 GHz, which provided the maximum output power of +0.5 dBm. The fabricated radiator occupies the chip area of 1.44 mm2, and it consumes dc power of 272 mW under a 1.2-V supply.

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A +3-dBm-EIRP 240-GHz Circular-Polarized Radiator Utilizing a Sub-THz PA in 65-nm CMOS

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Keywords

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