@inproceedings{09ed67bf63034a44a2577490d10b20c1,
title = "A compact SPICE model for statistical post-breakdown gate current increase due to TDDB",
abstract = "We developed a compact SPICE model capable of modeling the increases in post-breakdown (BD) gate current (IG-BD) due to time-dependent dielectric breakdown (TDDB), for circuit level simulations. IG-BD is determined by the random shape of the BD path given by the percolation model and the location of BD path. The statistical nature of our analysis provides different IG-BD for each transistor and hence, can be efficient for statistical circuit simulation. The generated gate current is fed into the proposed SPICE model incorporating transistor threshold voltage shift (V TH-SHIFT) due to bias temperature instability (BTI). We present simulation results of a ring oscillator using our model and compare the results to experimental data from an ultrathin CMOS technology. We also show that IDDQ is a more representative signature of TDDB degradation than the delay of a ring oscillator.",
keywords = "Weilbull distribution, gate current, percolation, time-depedent dielectric breakdown (TDDB)",
author = "Kim, {Soo Youn} and Georgios Panagopoulos and Ho, {Chih Hsiang} and Mehdi Katoozi and Ethan Cannon and Kaushik Roy",
year = "2013",
doi = "10.1109/IRPS.2013.6531942",
language = "English",
isbn = "9781479901135",
series = "IEEE International Reliability Physics Symposium Proceedings",
pages = "2A.2.1--2A.2.4",
booktitle = "2013 IEEE International Reliability Physics Symposium, IRPS 2013",
note = "2013 IEEE International Reliability Physics Symposium, IRPS 2013 ; Conference date: 14-04-2013 Through 18-04-2013",
}