A compact SPICE model for statistical post-breakdown gate current increase due to TDDB

Soo Youn Kim, Georgios Panagopoulos, Chih Hsiang Ho, Mehdi Katoozi, Ethan Cannon, Kaushik Roy

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

17 Scopus citations

Abstract

We developed a compact SPICE model capable of modeling the increases in post-breakdown (BD) gate current (IG-BD) due to time-dependent dielectric breakdown (TDDB), for circuit level simulations. IG-BD is determined by the random shape of the BD path given by the percolation model and the location of BD path. The statistical nature of our analysis provides different IG-BD for each transistor and hence, can be efficient for statistical circuit simulation. The generated gate current is fed into the proposed SPICE model incorporating transistor threshold voltage shift (V TH-SHIFT) due to bias temperature instability (BTI). We present simulation results of a ring oscillator using our model and compare the results to experimental data from an ultrathin CMOS technology. We also show that IDDQ is a more representative signature of TDDB degradation than the delay of a ring oscillator.

Original languageEnglish
Title of host publication2013 IEEE International Reliability Physics Symposium, IRPS 2013
Pages2A.2.1-2A.2.4
DOIs
StatePublished - 2013
Event2013 IEEE International Reliability Physics Symposium, IRPS 2013 - Monterey, CA, United States
Duration: 14 Apr 201318 Apr 2013

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Conference

Conference2013 IEEE International Reliability Physics Symposium, IRPS 2013
Country/TerritoryUnited States
CityMonterey, CA
Period14/04/1318/04/13

Keywords

  • Weilbull distribution
  • gate current
  • percolation
  • time-depedent dielectric breakdown (TDDB)

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