A directional method of extrinsic resistance determination for millimeter-wave small-signal model

Tung The Lam Nguyen, Sam Dong Kim

Research output: Contribution to journalArticlepeer-review

Abstract

We propose in this study an approach to highly reliable extraction scheme for the extrinsic resistances of the W-band metamorphic high electron mobility transistors. This method uses a directional search technique to determine the channel resistance of the device under zero-biased condition by minimizing the fitting errors between hot field effect transistor model S-parameters and measurements. From this, the extraction accuracies of the extrinsic resistances and all intrinsic parameters are greatly improved. Extractions for the parasitic elements are performed at four different gate widths (2 × 10 μm, 2 × 20 μm, 2 × 30 μm, and 2 × 70 μm), and we achieved the most accurate parameter prediction among the small-signal models reported to date with an effective fitting error of 10.69% in a frequency range of 0.5-110 GHz.

Original languageEnglish
Pages (from-to)2609-2612
Number of pages4
JournalMicrowave and Optical Technology Letters
Volume56
Issue number11
DOIs
StatePublished - Nov 2014

Keywords

  • CAD
  • device modeling
  • HEMTs
  • microwave device modeling
  • MMIC
  • parameter extraction

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