A High-Gain AlGaAs/GaAs Heterojunction Bipolar Transistor Grown on Silicon Substrate

William Liu, Sam Dong Kim

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

High gain AlGaAs/GaAs heterojunction bipolar transistors (HBTs) grown on silicon substrate have been fabricated. These HBTs-on-Si incorporate depleted AlGaAs passivation ledge to reduce extrinsic base surface recombination current and base quasi-electric field to reduce base bulk recombination current. Measured current gain of 100 is obtained for devices with an emitter area of 4×10 µm2. To our knowledge, this is the highest current gain reported for AlGaAs/GaAs HBTs grown on Si substrates. The dominant base current components is determined. The leakage currents of the base-collector junctions are also examined, and are compared to similar devices grown on GaAs substrate. Implications of these observed junction characteristics of HBTs-on-Si for power applications are discussed.

Original languageEnglish
Pages (from-to)2656-2659
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume31
Issue number9 R
DOIs
StatePublished - Sep 1992

Keywords

  • Base quasi-electric field
  • Gaas-on-Si
  • Hbt
  • Surface passivation

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