Abstract
High gain AlGaAs/GaAs heterojunction bipolar transistors (HBTs) grown on silicon substrate have been fabricated. These HBTs-on-Si incorporate depleted AlGaAs passivation ledge to reduce extrinsic base surface recombination current and base quasi-electric field to reduce base bulk recombination current. Measured current gain of 100 is obtained for devices with an emitter area of 4×10 µm2. To our knowledge, this is the highest current gain reported for AlGaAs/GaAs HBTs grown on Si substrates. The dominant base current components is determined. The leakage currents of the base-collector junctions are also examined, and are compared to similar devices grown on GaAs substrate. Implications of these observed junction characteristics of HBTs-on-Si for power applications are discussed.
Original language | English |
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Pages (from-to) | 2656-2659 |
Number of pages | 4 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 31 |
Issue number | 9 R |
DOIs | |
State | Published - Sep 1992 |
Keywords
- Base quasi-electric field
- Gaas-on-Si
- Hbt
- Surface passivation