A "molecular eraser" for dip-pen nanolithography

Jae Won Jang; Daniel Maspoch; Tsuyohiko Fujigaya; Chad A. Mirkin

doi:10.1002/smll.200600679

A "molecular eraser" for dip-pen nanolithography

Jae Won Jang, Daniel Maspoch, Tsuyohiko Fujigaya, Chad A. Mirkin

Division of System Semiconductor

Northwestern University

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

An erasing method for repairing defective nanostructures generated in a dip-pen nanolithography (DPN) using conductive tip and conductive atomic force microscope (c-AFM) to electrochemically induce desorption is described. c-AFM would be used to selectively desorb portions of a monolayer-based structure made by DPN with alkanethiol inks on gold. c-AFM is used to selectively control the elimination of 16-mercaptohexadecanoic acid (MHA) nanostructures. This erasing technique can be coupled with DPN, and the eliminated MHA features can be backfilled with a new ink by simply coating the cantilever with the desired molecule. This procedure results in the elimination of the MHA-based triangle and replacement with a 11-ferrocenyl-1-undecanethiol (FUT) based compound without a damage to the 1-octadecanethiol (ODT)-coated regions of the substrate.

Original language	English
Pages (from-to)	600-605
Number of pages	6
Journal	Small
Volume	3
Issue number	4
DOIs	https://doi.org/10.1002/smll.200600679
State	Published - Apr 2007

Keywords

Alkanethiols
Atomic force microscopy
Dip-pen nanolithography
Self-assembled monolayers

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10.1002/smll.200600679

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abstract = "An erasing method for repairing defective nanostructures generated in a dip-pen nanolithography (DPN) using conductive tip and conductive atomic force microscope (c-AFM) to electrochemically induce desorption is described. c-AFM would be used to selectively desorb portions of a monolayer-based structure made by DPN with alkanethiol inks on gold. c-AFM is used to selectively control the elimination of 16-mercaptohexadecanoic acid (MHA) nanostructures. This erasing technique can be coupled with DPN, and the eliminated MHA features can be backfilled with a new ink by simply coating the cantilever with the desired molecule. This procedure results in the elimination of the MHA-based triangle and replacement with a 11-ferrocenyl-1-undecanethiol (FUT) based compound without a damage to the 1-octadecanethiol (ODT)-coated regions of the substrate.",

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AU - Maspoch, Daniel

AU - Fujigaya, Tsuyohiko

AU - Mirkin, Chad A.

PY - 2007/4

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N2 - An erasing method for repairing defective nanostructures generated in a dip-pen nanolithography (DPN) using conductive tip and conductive atomic force microscope (c-AFM) to electrochemically induce desorption is described. c-AFM would be used to selectively desorb portions of a monolayer-based structure made by DPN with alkanethiol inks on gold. c-AFM is used to selectively control the elimination of 16-mercaptohexadecanoic acid (MHA) nanostructures. This erasing technique can be coupled with DPN, and the eliminated MHA features can be backfilled with a new ink by simply coating the cantilever with the desired molecule. This procedure results in the elimination of the MHA-based triangle and replacement with a 11-ferrocenyl-1-undecanethiol (FUT) based compound without a damage to the 1-octadecanethiol (ODT)-coated regions of the substrate.

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KW - Self-assembled monolayers

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A "molecular eraser" for dip-pen nanolithography

Abstract

Keywords

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