A nonlinear model for frequency dispersion and DC intrinsic parameter extraction for GaN-based HEMT

Tung The Lam Nguyen, Sam Dong Kim

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

We propose in this study a practical nonlinear model for the AlGaN/GaN high electron mobility transistors (HEMTs) to extract DC intrinsic transconductance (gmDC), output conductance (gdsDC), and electron mobility from the intrinsic parameter set measured at high frequencies. An excellent agreement in I–V characteristics of the model with a fitting error of 0.11% enables us successfully extract the gmDC, gdsDC, and the total transconductance dispersion. For this model, we also present a reliable analysis scheme wherein the frequency dispersion effect due regional surface states in AlGaN/GaN HEMTs is taken into account under various bias conditions.

Original languageEnglish
Pages (from-to)109-116
Number of pages8
JournalSolid-State Electronics
Volume137
DOIs
StatePublished - Nov 2017

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