TY - JOUR
T1 - A nonlinear model for frequency dispersion and DC intrinsic parameter extraction for GaN-based HEMT
AU - Nguyen, Tung The Lam
AU - Kim, Sam Dong
N1 - Publisher Copyright:
© 2017 Elsevier Ltd
PY - 2017/11
Y1 - 2017/11
N2 - We propose in this study a practical nonlinear model for the AlGaN/GaN high electron mobility transistors (HEMTs) to extract DC intrinsic transconductance (gmDC), output conductance (gdsDC), and electron mobility from the intrinsic parameter set measured at high frequencies. An excellent agreement in I–V characteristics of the model with a fitting error of 0.11% enables us successfully extract the gmDC, gdsDC, and the total transconductance dispersion. For this model, we also present a reliable analysis scheme wherein the frequency dispersion effect due regional surface states in AlGaN/GaN HEMTs is taken into account under various bias conditions.
AB - We propose in this study a practical nonlinear model for the AlGaN/GaN high electron mobility transistors (HEMTs) to extract DC intrinsic transconductance (gmDC), output conductance (gdsDC), and electron mobility from the intrinsic parameter set measured at high frequencies. An excellent agreement in I–V characteristics of the model with a fitting error of 0.11% enables us successfully extract the gmDC, gdsDC, and the total transconductance dispersion. For this model, we also present a reliable analysis scheme wherein the frequency dispersion effect due regional surface states in AlGaN/GaN HEMTs is taken into account under various bias conditions.
UR - http://www.scopus.com/inward/record.url?scp=85029279293&partnerID=8YFLogxK
U2 - 10.1016/j.sse.2017.09.003
DO - 10.1016/j.sse.2017.09.003
M3 - Article
AN - SCOPUS:85029279293
SN - 0038-1101
VL - 137
SP - 109
EP - 116
JO - Solid-State Electronics
JF - Solid-State Electronics
ER -