A physical model to predict STT-MRAM performance degradation induced by TDDB

Chih Hsiang Ho; Georgios D. Panagopoulos; Soo Youn Kim; Yusung Kim; Dongsoo Lee; Kaushik Roy

doi:10.1109/DRC.2013.6633792

A physical model to predict STT-MRAM performance degradation induced by TDDB

Chih Hsiang Ho, Georgios D. Panagopoulos, Soo Youn Kim, Yusung Kim, Dongsoo Lee, Kaushik Roy

Division of System Semiconductor

Purdue University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

9 Scopus citations

Original language	English
Title of host publication	71st Device Research Conference, DRC 2013 - Conference Digest
Pages	59-60
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2013.6633792
State	Published - 2013
Event	71st Device Research Conference, DRC 2013 - Notre Dame, IN, United States Duration: 23 Jun 2013 → 26 Jun 2013

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Conference

Conference	71st Device Research Conference, DRC 2013
Country/Territory	United States
City	Notre Dame, IN
Period	23/06/13 → 26/06/13

Access to Document

10.1109/DRC.2013.6633792

Cite this

@inproceedings{35a55b36959441649a63eb8403d72959,

title = "A physical model to predict STT-MRAM performance degradation induced by TDDB",

author = "Ho, {Chih Hsiang} and Panagopoulos, {Georgios D.} and Kim, {Soo Youn} and Yusung Kim and Dongsoo Lee and Kaushik Roy",

year = "2013",

doi = "10.1109/DRC.2013.6633792",

language = "English",

isbn = "9781479908110",

series = "Device Research Conference - Conference Digest, DRC",

pages = "59--60",

booktitle = "71st Device Research Conference, DRC 2013 - Conference Digest",

note = "71st Device Research Conference, DRC 2013 ; Conference date: 23-06-2013 Through 26-06-2013",

}

Ho, CH, Panagopoulos, GD, Kim, SY, Kim, Y, Lee, D & Roy, K 2013, A physical model to predict STT-MRAM performance degradation induced by TDDB. in 71st Device Research Conference, DRC 2013 - Conference Digest., 6633792, Device Research Conference - Conference Digest, DRC, pp. 59-60, 71st Device Research Conference, DRC 2013, Notre Dame, IN, United States, 23/06/13. https://doi.org/10.1109/DRC.2013.6633792

A physical model to predict STT-MRAM performance degradation induced by TDDB. / Ho, Chih Hsiang; Panagopoulos, Georgios D.; Kim, Soo Youn et al.
71st Device Research Conference, DRC 2013 - Conference Digest. 2013. p. 59-60 6633792 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A physical model to predict STT-MRAM performance degradation induced by TDDB

AU - Ho, Chih Hsiang

AU - Panagopoulos, Georgios D.

AU - Kim, Soo Youn

AU - Kim, Yusung

AU - Lee, Dongsoo

AU - Roy, Kaushik

PY - 2013

Y1 - 2013

UR - http://www.scopus.com/inward/record.url?scp=84890056503&partnerID=8YFLogxK

U2 - 10.1109/DRC.2013.6633792

DO - 10.1109/DRC.2013.6633792

M3 - Conference contribution

AN - SCOPUS:84890056503

SN - 9781479908110

T3 - Device Research Conference - Conference Digest, DRC

SP - 59

EP - 60

BT - 71st Device Research Conference, DRC 2013 - Conference Digest

T2 - 71st Device Research Conference, DRC 2013

Y2 - 23 June 2013 through 26 June 2013

ER -

A physical model to predict STT-MRAM performance degradation induced by TDDB

Publication series

Conference

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