A physics-based statistical model for reliability of STT-MRAM considering oxide variability

Chih Hsiang Ho, Georgios D. Panagopoulos, Soo Youn Kim, Yusung Kim, Dongsoo Lee, Kaushik Roy

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

8 Scopus citations

Abstract

A physics-based statistical model considering oxide thickness (T ox) variability is proposed for evaluating the impact of time-dependent dielectric breakdown (TDDB) on the performance of spin-transfer torque magneto-resistive random access memory (STT-MRAM). The statistics of breakdown events are captured by the percolation theory, physics-based analytical model for successive break down (BD) and 1-D non-equilibrium Green's function (NEGF). Using the proposed model, we examine Tox-dependence of STT-MRAM performance distribution, such as tunneling magneto-resistance ratio (TMR) and critical current (IC). Simulation results clearly show that oxide variability needs to be taken into account for better lifetime prediction. The proposed model has been validated with experimental data.

Original languageEnglish
Title of host publication2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013
Pages29-32
Number of pages4
DOIs
StatePublished - 2013
Event18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013 - Glasgow, United Kingdom
Duration: 3 Sep 20135 Sep 2013

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013
Country/TerritoryUnited Kingdom
CityGlasgow
Period3/09/135/09/13

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