TY - GEN
T1 - A physics-based statistical model for reliability of STT-MRAM considering oxide variability
AU - Ho, Chih Hsiang
AU - Panagopoulos, Georgios D.
AU - Kim, Soo Youn
AU - Kim, Yusung
AU - Lee, Dongsoo
AU - Roy, Kaushik
PY - 2013
Y1 - 2013
N2 - A physics-based statistical model considering oxide thickness (T ox) variability is proposed for evaluating the impact of time-dependent dielectric breakdown (TDDB) on the performance of spin-transfer torque magneto-resistive random access memory (STT-MRAM). The statistics of breakdown events are captured by the percolation theory, physics-based analytical model for successive break down (BD) and 1-D non-equilibrium Green's function (NEGF). Using the proposed model, we examine Tox-dependence of STT-MRAM performance distribution, such as tunneling magneto-resistance ratio (TMR) and critical current (IC). Simulation results clearly show that oxide variability needs to be taken into account for better lifetime prediction. The proposed model has been validated with experimental data.
AB - A physics-based statistical model considering oxide thickness (T ox) variability is proposed for evaluating the impact of time-dependent dielectric breakdown (TDDB) on the performance of spin-transfer torque magneto-resistive random access memory (STT-MRAM). The statistics of breakdown events are captured by the percolation theory, physics-based analytical model for successive break down (BD) and 1-D non-equilibrium Green's function (NEGF). Using the proposed model, we examine Tox-dependence of STT-MRAM performance distribution, such as tunneling magneto-resistance ratio (TMR) and critical current (IC). Simulation results clearly show that oxide variability needs to be taken into account for better lifetime prediction. The proposed model has been validated with experimental data.
UR - http://www.scopus.com/inward/record.url?scp=84891089525&partnerID=8YFLogxK
U2 - 10.1109/SISPAD.2013.6650566
DO - 10.1109/SISPAD.2013.6650566
M3 - Conference contribution
AN - SCOPUS:84891089525
SN - 9781467357364
T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
SP - 29
EP - 32
BT - 2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013
T2 - 18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013
Y2 - 3 September 2013 through 5 September 2013
ER -