A poly resistor based time domain CMOS temperature sensor with 9b SAR and fine delay line

Zhiwei Xu, Sangjin Byun

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

This paper presents a new type of time domain CMOS temperature sensor with a 9b successive approximation register (SAR) control logic and a fine delay line. We adopted an N-type poly resistor as the sensing element for temperature linearity. The chip was implemented in a standard 0.18 m 1P6M bulk CMOS process with general VTH transistors and the active die area was 0.432 mm2. The temperature resolution was 0.49C and the temperature error was from −1.6 to +0.6C over the range of 0 to 100C after two-point calibration. The supply voltage sensitivity was 0.085C/mV. The conversion rate was 25kHz and the energy efficiency was 7.2 nJ/sample.

Original languageEnglish
Article number2053
JournalSensors
Volume20
Issue number7
DOIs
StatePublished - 1 Apr 2020

Keywords

  • CMOS integrated circuits
  • Coarse delay line
  • Fine delay line
  • SAR
  • Temperature sensor
  • Time domain

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