Abstract
This paper presents a new type of time domain CMOS temperature sensor with a 9b successive approximation register (SAR) control logic and a fine delay line. We adopted an N-type poly resistor as the sensing element for temperature linearity. The chip was implemented in a standard 0.18 m 1P6M bulk CMOS process with general VTH transistors and the active die area was 0.432 mm2. The temperature resolution was 0.49◦C and the temperature error was from −1.6 to +0.6◦C over the range of 0 to 100◦C after two-point calibration. The supply voltage sensitivity was 0.085◦C/mV. The conversion rate was 25kHz and the energy efficiency was 7.2 nJ/sample.
Original language | English |
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Article number | 2053 |
Journal | Sensors |
Volume | 20 |
Issue number | 7 |
DOIs | |
State | Published - 1 Apr 2020 |
Keywords
- CMOS integrated circuits
- Coarse delay line
- Fine delay line
- SAR
- Temperature sensor
- Time domain