A relation between EL2 (Ec-0.81 eV) and EL6 (Ec-0.35 eV) in annealed HB-GaAs by hydrogen plasma exposure

Hoon Young Cho; Eun Kyu Kim; Suk Ki Min

doi:10.1063/1.344189

A relation between EL2 (E_c-0.81 eV) and EL6 (E_c-0.35 eV) in annealed HB-GaAs by hydrogen plasma exposure

Hoon Young Cho, Eun Kyu Kim, Suk Ki Min

Department of Physics

Korea Advanced Institute of Science and Technology

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

We present annealing and hydrogenation behaviors for EL2 (E _c-0.81 eV) and EL6 (E_c-0.35 eV) as dominant deep levels in GaAs. During rapid thermal annealing and the hydrogenation process, a relation has been identified between a midgap level group (the EL2 group) at 0.73, 0.81, and 0.87 eV, and a deep-level group (the EL6 group) at 0.27, 0.18, and 0.22 eV below the conduction band. We then discuss a relation between the two groups and their origins.

Original language	English
Pages (from-to)	3038-3041
Number of pages	4
Journal	Journal of Applied Physics
Volume	66
Issue number	7
DOIs	https://doi.org/10.1063/1.344189
State	Published - 1989

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title = "A relation between EL2 (Ec-0.81 eV) and EL6 (Ec-0.35 eV) in annealed HB-GaAs by hydrogen plasma exposure",

abstract = "We present annealing and hydrogenation behaviors for EL2 (E c-0.81 eV) and EL6 (Ec-0.35 eV) as dominant deep levels in GaAs. During rapid thermal annealing and the hydrogenation process, a relation has been identified between a midgap level group (the EL2 group) at 0.73, 0.81, and 0.87 eV, and a deep-level group (the EL6 group) at 0.27, 0.18, and 0.22 eV below the conduction band. We then discuss a relation between the two groups and their origins.",

author = "Cho, \{Hoon Young\} and Kim, \{Eun Kyu\} and Min, \{Suk Ki\}",

year = "1989",

doi = "10.1063/1.344189",

language = "English",

volume = "66",

pages = "3038--3041",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "7",

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T1 - A relation between EL2 (Ec-0.81 eV) and EL6 (Ec-0.35 eV) in annealed HB-GaAs by hydrogen plasma exposure

AU - Cho, Hoon Young

AU - Kim, Eun Kyu

AU - Min, Suk Ki

PY - 1989

Y1 - 1989

N2 - We present annealing and hydrogenation behaviors for EL2 (E c-0.81 eV) and EL6 (Ec-0.35 eV) as dominant deep levels in GaAs. During rapid thermal annealing and the hydrogenation process, a relation has been identified between a midgap level group (the EL2 group) at 0.73, 0.81, and 0.87 eV, and a deep-level group (the EL6 group) at 0.27, 0.18, and 0.22 eV below the conduction band. We then discuss a relation between the two groups and their origins.

AB - We present annealing and hydrogenation behaviors for EL2 (E c-0.81 eV) and EL6 (Ec-0.35 eV) as dominant deep levels in GaAs. During rapid thermal annealing and the hydrogenation process, a relation has been identified between a midgap level group (the EL2 group) at 0.73, 0.81, and 0.87 eV, and a deep-level group (the EL6 group) at 0.27, 0.18, and 0.22 eV below the conduction band. We then discuss a relation between the two groups and their origins.

UR - https://www.scopus.com/pages/publications/26044466914

U2 - 10.1063/1.344189

DO - 10.1063/1.344189

M3 - Article

AN - SCOPUS:26044466914

SN - 0021-8979

VL - 66

SP - 3038

EP - 3041

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

ER -

A relation between EL2 (E_c-0.81 eV) and EL6 (E_c-0.35 eV) in annealed HB-GaAs by hydrogen plasma exposure

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