A role of oxygen vacancy on annealed ZnO film in the hydrogen atmosphere

Hyun Woo Park; Kwun Bum Chung; Jin Seong Park

doi:10.1016/j.cap.2012.02.052

A role of oxygen vacancy on annealed ZnO film in the hydrogen atmosphere

Hyun Woo Park, Kwun Bum Chung, Jin Seong Park

Department of Physics

Dankook University

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

RF-sputtered ZnO films were annealed in the ambient atmospheres of Ar or hydrogen gas. Hydrogen effects on oxygen vacancies of ZnO films were studied through the characterizations of physical and electrical properties after annealing at 300 °C. The carrier concentration was increased to ∼10 ¹⁷ cm ^-3 in both annealing ambient atmospheres. On the other hand, the mobility was distinctly decreased when the films were annealed in the ambient atmosphere of Ar gas. Even though the physical structure undergoes small changes regardless of annealing ambient atmospheres, the increase of oxygen vacancies was remarkably suppressed in the annealing ambient atmosphere of hydrogen gas. Two distinct band edge states, generated by oxygen vacancies, are correlated to the changes in carrier concentration and mobility as a function of energy level below the conduction band.

Original language	English
Pages (from-to)	S164-S167
Journal	Current Applied Physics
Volume	12
Issue number	SUPPL. 2
DOIs	https://doi.org/10.1016/j.cap.2012.02.052
State	Published - Sep 2012

Keywords

Carrier concentration
Hydrogen annealing
Mobility
Oxide semiconductor
Oxygen vacancy
ZnO film

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10.1016/j.cap.2012.02.052

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title = "A role of oxygen vacancy on annealed ZnO film in the hydrogen atmosphere",

abstract = "RF-sputtered ZnO films were annealed in the ambient atmospheres of Ar or hydrogen gas. Hydrogen effects on oxygen vacancies of ZnO films were studied through the characterizations of physical and electrical properties after annealing at 300 °C. The carrier concentration was increased to ∼10 17 cm -3 in both annealing ambient atmospheres. On the other hand, the mobility was distinctly decreased when the films were annealed in the ambient atmosphere of Ar gas. Even though the physical structure undergoes small changes regardless of annealing ambient atmospheres, the increase of oxygen vacancies was remarkably suppressed in the annealing ambient atmosphere of hydrogen gas. Two distinct band edge states, generated by oxygen vacancies, are correlated to the changes in carrier concentration and mobility as a function of energy level below the conduction band.",

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AU - Park, Hyun Woo

AU - Chung, Kwun Bum

AU - Park, Jin Seong

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N2 - RF-sputtered ZnO films were annealed in the ambient atmospheres of Ar or hydrogen gas. Hydrogen effects on oxygen vacancies of ZnO films were studied through the characterizations of physical and electrical properties after annealing at 300 °C. The carrier concentration was increased to ∼10 17 cm -3 in both annealing ambient atmospheres. On the other hand, the mobility was distinctly decreased when the films were annealed in the ambient atmosphere of Ar gas. Even though the physical structure undergoes small changes regardless of annealing ambient atmospheres, the increase of oxygen vacancies was remarkably suppressed in the annealing ambient atmosphere of hydrogen gas. Two distinct band edge states, generated by oxygen vacancies, are correlated to the changes in carrier concentration and mobility as a function of energy level below the conduction band.

AB - RF-sputtered ZnO films were annealed in the ambient atmospheres of Ar or hydrogen gas. Hydrogen effects on oxygen vacancies of ZnO films were studied through the characterizations of physical and electrical properties after annealing at 300 °C. The carrier concentration was increased to ∼10 17 cm -3 in both annealing ambient atmospheres. On the other hand, the mobility was distinctly decreased when the films were annealed in the ambient atmosphere of Ar gas. Even though the physical structure undergoes small changes regardless of annealing ambient atmospheres, the increase of oxygen vacancies was remarkably suppressed in the annealing ambient atmosphere of hydrogen gas. Two distinct band edge states, generated by oxygen vacancies, are correlated to the changes in carrier concentration and mobility as a function of energy level below the conduction band.

KW - Carrier concentration

KW - Hydrogen annealing

KW - Mobility

KW - Oxide semiconductor

KW - Oxygen vacancy

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A role of oxygen vacancy on annealed ZnO film in the hydrogen atmosphere

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