@inproceedings{7c0f9c1695df47bca0cf9041553902c0,
title = "A study of defects in AlGaN/GaN heterostructures",
abstract = "The authors study defects in AlGaN/GaN heterostructures using DLTS. The AlGaN/GaN heterostructures used were grown by RF-plasma assisted molecular beam epitaxy (PA-MBE) on sapphire substrates. The Al mole fraction was kept at 0.2 for all the AlGaN layers. Two electron traps were detected. The trap levels are Ec-0.15eV and Ec-0.25eV, respectively. These traps are attributed to point defects and dislocations through analysing DLTS features such as the measured fill pulse time. The trap related to the dislocation was reduced by annealing.",
author = "Na, {J. H.} and Lee, {H. S.} and Jeon, {H. C.} and Jeong, {Y. S.} and Park, {C. J.} and Park, {Y. S.} and Cho, {H. Y.} and Kang, {T. W.} and Oh, {J. E.} and Chung, {K. S.} and Lee, {K. H.}",
note = "Publisher Copyright: {\textcopyright} 2002 IEEE.; 12th International Conference on Molecular Beam Epitaxy, MBE 2002 ; Conference date: 15-09-2002 Through 20-09-2002",
year = "2002",
doi = "10.1109/MBE.2002.1037823",
language = "English",
series = "MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "189--190",
booktitle = "MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy",
address = "United States",
}