Abstract
Spin-coated perhydropolysilazane films on Si(100) substrates were prepared by a dibutyl ether solution and converted into SiOx using a variety of low temperature curing methods. From the Fourier transform IR spectroscopy and the refractive index (RI) measurements, the successful conversion to a high density silica network was observed from the curing methods by dipping the coatings into either diluted H2 O2 (for > 10 min) or deionized water under a 405 nm UV irradiation (for > 60 min) at near room temperature. The measured RI values of the cured SiOx films were 1.45-1.47, and the X-ray photoelectron spectroscopy showed that the O/Si stoichiometries of the cured SiOx films were in the range of 1.5-1.7.
Original language | English |
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Pages (from-to) | H23-H25 |
Journal | Electrochemical and Solid-State Letters |
Volume | 13 |
Issue number | 1 |
DOIs | |
State | Published - 2009 |