Accuracy improvement of small-signal model minimising parameter sensitivity based on de-embedded sub-model method at W-band

A highly reliable small-signal parameter extraction method for parasitic elements of the 0.1-μm GaAs metamorphic high electron mobility transistors is presented. De-embedding scheme for the coplanar waveguide (CPW) feeding structure is utilised in this method in a frequency range of 0.5-110 GHz with an enhancement approach to the correction of source inductance parameter sensitivity derived from oscillating measurements. The parasitic extrinsic capacitances are determined by modelling an Π equivalent circuit including the interaction between the sub-model and the CPW feedings. From this method, the authors achieved the most accurate parameter prediction with an effective fitting error of 10.83% among the small-signal models reported to date.