Achieving High Mobility and Excellent Stability in Amorphous In-Ga-Zn-Sn-O Thin-Film Transistors

Il Man Choi; Min Jae Kim; Nuri On; Aeran Song; Kwun Bum Chung; Hoon Jeong; Jeong Ki Park; Jae Kyeong Jeong

doi:10.1109/TED.2020.2968592

Achieving High Mobility and Excellent Stability in Amorphous In-Ga-Zn-Sn-O Thin-Film Transistors

Il Man Choi, Min Jae Kim, Nuri On, Aeran Song, Kwun Bum Chung, Hoon Jeong, Jeong Ki Park, Jae Kyeong Jeong

Department of Physics

Research output: Contribution to journal › Article › peer-review

60 Scopus citations

Abstract

This article reports the fabrication of high-performance amorphous indium gallium zinc tin oxide (a-IGZTO) thin-film transistors (TFTs) with superior bias stability. For comparison, amorphous indium gallium zinc oxide (a-IGZO) TFTs were also investigated to clarify the origin of the superior performance of IGZTO TFTs. It was found that the simultaneous heavy loading of In and Sn into the IGZTO system facilitated an effective mass densification, leading to a reduction in tail states and deep states. The fabricated a-IGZTO TFTs exhibited a high electron mobility (μ_FE) of 46.7 cm²/Vs, a subthreshold swing (SS) gate of 0.15 V/decade, and an I_ON/OFF ratio > 1 × 10⁸. Furthermore, greater gate-bias stress stability was observed for the IGZTO TFTs compared with the IGZO TFTs.

Original language	English
Article number	8985304
Pages (from-to)	1014-1020
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	67
Issue number	3
DOIs	https://doi.org/10.1109/TED.2020.2968592
State	Published - Mar 2020

Keywords

Amorphous indium gallium zinc oxide (a-IGZO)
amorphous indium gallium zinc tin oxide (a-IGZTO)
high performance
mass density
thin-film transistors (TFTs)

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title = "Achieving High Mobility and Excellent Stability in Amorphous In-Ga-Zn-Sn-O Thin-Film Transistors",

abstract = "This article reports the fabrication of high-performance amorphous indium gallium zinc tin oxide (a-IGZTO) thin-film transistors (TFTs) with superior bias stability. For comparison, amorphous indium gallium zinc oxide (a-IGZO) TFTs were also investigated to clarify the origin of the superior performance of IGZTO TFTs. It was found that the simultaneous heavy loading of In and Sn into the IGZTO system facilitated an effective mass densification, leading to a reduction in tail states and deep states. The fabricated a-IGZTO TFTs exhibited a high electron mobility (μFE) of 46.7 cm2/Vs, a subthreshold swing (SS) gate of 0.15 V/decade, and an ION/OFF ratio > 1 × 108. Furthermore, greater gate-bias stress stability was observed for the IGZTO TFTs compared with the IGZO TFTs.",

keywords = "Amorphous indium gallium zinc oxide (a-IGZO), amorphous indium gallium zinc tin oxide (a-IGZTO), high performance, mass density, thin-film transistors (TFTs)",

author = "Choi, {Il Man} and Kim, {Min Jae} and Nuri On and Aeran Song and Chung, {Kwun Bum} and Hoon Jeong and Park, {Jeong Ki} and Jeong, {Jae Kyeong}",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.",

year = "2020",

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AU - Choi, Il Man

AU - Kim, Min Jae

AU - On, Nuri

AU - Song, Aeran

AU - Chung, Kwun Bum

AU - Jeong, Hoon

AU - Park, Jeong Ki

AU - Jeong, Jae Kyeong

PY - 2020/3

Y1 - 2020/3

N2 - This article reports the fabrication of high-performance amorphous indium gallium zinc tin oxide (a-IGZTO) thin-film transistors (TFTs) with superior bias stability. For comparison, amorphous indium gallium zinc oxide (a-IGZO) TFTs were also investigated to clarify the origin of the superior performance of IGZTO TFTs. It was found that the simultaneous heavy loading of In and Sn into the IGZTO system facilitated an effective mass densification, leading to a reduction in tail states and deep states. The fabricated a-IGZTO TFTs exhibited a high electron mobility (μFE) of 46.7 cm2/Vs, a subthreshold swing (SS) gate of 0.15 V/decade, and an ION/OFF ratio > 1 × 108. Furthermore, greater gate-bias stress stability was observed for the IGZTO TFTs compared with the IGZO TFTs.

AB - This article reports the fabrication of high-performance amorphous indium gallium zinc tin oxide (a-IGZTO) thin-film transistors (TFTs) with superior bias stability. For comparison, amorphous indium gallium zinc oxide (a-IGZO) TFTs were also investigated to clarify the origin of the superior performance of IGZTO TFTs. It was found that the simultaneous heavy loading of In and Sn into the IGZTO system facilitated an effective mass densification, leading to a reduction in tail states and deep states. The fabricated a-IGZTO TFTs exhibited a high electron mobility (μFE) of 46.7 cm2/Vs, a subthreshold swing (SS) gate of 0.15 V/decade, and an ION/OFF ratio > 1 × 108. Furthermore, greater gate-bias stress stability was observed for the IGZTO TFTs compared with the IGZO TFTs.

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KW - amorphous indium gallium zinc tin oxide (a-IGZTO)

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KW - mass density

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Achieving High Mobility and Excellent Stability in Amorphous In-Ga-Zn-Sn-O Thin-Film Transistors

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