Abstract
The price of the solid-state drives has become a major factor in the development of flash memory technology. Major semiconductor companies are developing quadruple-level cell NAND-based SSDs for smart devices. Unfortunately, SSDs composed of quadruple-level cell (QLC) flash memory may suffer from low performance. In addition, few studies on internal page buffering mechanisms have been conducted. As a solution to these problems, an address pattern recognition flash translation layer (APR-FTL) is proposed in this study. APRA-FTL gathers the data in a page unit and separates random data from sequential data. Furthermore, APRA-FTL proposes address mapping algorithm which is compatible to the page buffering algorithm. Experimental results show that APRA-FTL generates a lower number of write and erase operations compared to previous FTL algorithms.
| Original language | English |
|---|---|
| Pages (from-to) | 957-960 |
| Number of pages | 4 |
| Journal | International Journal of Advanced Computer Science and Applications |
| Volume | 13 |
| Issue number | 10 |
| DOIs | |
| State | Published - 2022 |
Keywords
- Memory management
- Nonvolatile memory
- Smart devices