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AlGaAs/Si dual-junction tandem solar cells by epitaxial lift-off and print-transfer-assisted direct bonding

  • Kanglin Xiong
  • , Hongyi Mi
  • , Tzu Hsuan Chang
  • , Dong Liu
  • , Zhenyang Xia
  • , Meng Yin Wu
  • , Xin Yin
  • , Shaoqin Gong
  • , Weidong Zhou
  • , Jae Cheol Shin
  • , Xiuling Li
  • , Michael Arnold
  • , Xudong Wang
  • , Hao Chih Yuan
  • , Zhenqiang Ma

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

A novel method is developed to realize a III-V/Si dual-junction photovoltaic cell by combining epitaxial lift-off (ELO) and print-transfer-assisted bonding methods. The adoption of ELO enables III-V wafers to be recycled and reused, which can further lower the cost of III-V/Si photovoltaic panels. For demonstration, high crystal quality, micrometer-thick, GaAs/AlGaAs/GaAs films are lifted off, transferred, and directly bonded onto Si wafer without the use of any adhesive or bonding agents. The bonding interface is optically transparent and conductive both thermally and electrically. Prototype AlGaAs/Si dual-junction tandem solar cells have been fabricated and exhibit decent performance.

Original languageEnglish
Pages (from-to)47-55
Number of pages9
JournalEnergy Science and Engineering
Volume6
Issue number1
DOIs
StatePublished - Feb 2018

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 7 - Affordable and Clean Energy
    SDG 7 Affordable and Clean Energy

Keywords

  • Epitaxy
  • heterogeneous
  • solar cell
  • thin films

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