Alloyed high-k-based resistive switching memory in contact hole structures

Byeongjeong Kim; Chandreswar Mahata; Hojeong Ryu; Muhammad Ismail; Byung Do Yang; Sungjun Kim

doi:10.3390/coatings11040451

Alloyed high-k-based resistive switching memory in contact hole structures

Byeongjeong Kim, Chandreswar Mahata, Hojeong Ryu, Muhammad Ismail, Byung Do Yang, Sungjun Kim

Department of Electronics & Electrical Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Resistive random-access memory (RRAM) devices are noticeable next generation memory devices. However, only few studies have been conducted regarding RRAM devices made of alloy. In this paper, we investigate the resistive switching behaviors of an Au/Ti/HfTiO_x /p-Si memory device. The bipolar switching is characterized depending on compliance current under DC sweep mode. Good retention in the low-resistance state and high-resistance state is attained for nonvolatile memory and long-term memory in a synapse device. For practical switching operation, the pulse transient characteristics are studied for set and reset processes. Moreover, a synaptic weight change is achieved by a moderate pulse input for the potentiation and depression characteristics of the synaptic device. We reveal that the high-resistance state and low-resistance state are dominated by Schottky emissions.

Original language	English
Article number	451
Journal	Coatings
Volume	11
Issue number	4
DOIs	https://doi.org/10.3390/coatings11040451
State	Published - Apr 2021

Keywords

Alloying
Neuromorphic
Resistive memory
Resistive switching

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10.3390/coatings11040451

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title = "Alloyed high-k-based resistive switching memory in contact hole structures",

abstract = "Resistive random-access memory (RRAM) devices are noticeable next generation memory devices. However, only few studies have been conducted regarding RRAM devices made of alloy. In this paper, we investigate the resistive switching behaviors of an Au/Ti/HfTiOx /p-Si memory device. The bipolar switching is characterized depending on compliance current under DC sweep mode. Good retention in the low-resistance state and high-resistance state is attained for nonvolatile memory and long-term memory in a synapse device. For practical switching operation, the pulse transient characteristics are studied for set and reset processes. Moreover, a synaptic weight change is achieved by a moderate pulse input for the potentiation and depression characteristics of the synaptic device. We reveal that the high-resistance state and low-resistance state are dominated by Schottky emissions.",

keywords = "Alloying, Neuromorphic, Resistive memory, Resistive switching",

author = "Byeongjeong Kim and Chandreswar Mahata and Hojeong Ryu and Muhammad Ismail and Yang, {Byung Do} and Sungjun Kim",

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AU - Kim, Byeongjeong

AU - Mahata, Chandreswar

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AU - Yang, Byung Do

AU - Kim, Sungjun

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Y1 - 2021/4

N2 - Resistive random-access memory (RRAM) devices are noticeable next generation memory devices. However, only few studies have been conducted regarding RRAM devices made of alloy. In this paper, we investigate the resistive switching behaviors of an Au/Ti/HfTiOx /p-Si memory device. The bipolar switching is characterized depending on compliance current under DC sweep mode. Good retention in the low-resistance state and high-resistance state is attained for nonvolatile memory and long-term memory in a synapse device. For practical switching operation, the pulse transient characteristics are studied for set and reset processes. Moreover, a synaptic weight change is achieved by a moderate pulse input for the potentiation and depression characteristics of the synaptic device. We reveal that the high-resistance state and low-resistance state are dominated by Schottky emissions.

AB - Resistive random-access memory (RRAM) devices are noticeable next generation memory devices. However, only few studies have been conducted regarding RRAM devices made of alloy. In this paper, we investigate the resistive switching behaviors of an Au/Ti/HfTiOx /p-Si memory device. The bipolar switching is characterized depending on compliance current under DC sweep mode. Good retention in the low-resistance state and high-resistance state is attained for nonvolatile memory and long-term memory in a synapse device. For practical switching operation, the pulse transient characteristics are studied for set and reset processes. Moreover, a synaptic weight change is achieved by a moderate pulse input for the potentiation and depression characteristics of the synaptic device. We reveal that the high-resistance state and low-resistance state are dominated by Schottky emissions.

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Alloyed high-k-based resistive switching memory in contact hole structures

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Keywords

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