An advanced SLC-buffering for TLC NAND flash-based storage

Kirock Kwon; Dong Hyun Kang; Young Ik Eom

doi:10.1109/TCE.2017.015070

An advanced SLC-buffering for TLC NAND flash-based storage

Kirock Kwon, Dong Hyun Kang, Young Ik Eom

Department of Computer Science and Artificial Intelligence

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

In recent years, almost all consumer devices adopt NAND flash storage as their main storage, and the performance and capacity requirements for the storage components are increasing. To meet the requirements, many researchers and manufacturers have focused on combined SLC-TLC storage, which consists of high-speed single-level cell (SLC) and high-density triple-level cell (TLC) memory. In this paper, we re-design the internal structure of the combined SLC-TLC storage to improve its performance and lifetime. We also add new behavior by employing the I/O characteristics of the file system journaling to efficiently manage the SLC region inside the storage. We implemented our scheme on a real storage platform and compared its performance with those of the conventional techniques. The results of our evaluation show that our scheme improves the storage performance by up to 65% relative to the conventional techniques.

Original language	English
Article number	8246824
Pages (from-to)	459-466
Number of pages	8
Journal	IEEE Transactions on Consumer Electronics
Volume	63
Issue number	4
DOIs	https://doi.org/10.1109/TCE.2017.015070
State	Published - Nov 2017

Keywords

combined SLC-TLC storage
Dual mode program
file system journaling
FTL
NAND flash
SLC buffer
TLC NAND

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10.1109/TCE.2017.015070

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abstract = "In recent years, almost all consumer devices adopt NAND flash storage as their main storage, and the performance and capacity requirements for the storage components are increasing. To meet the requirements, many researchers and manufacturers have focused on combined SLC-TLC storage, which consists of high-speed single-level cell (SLC) and high-density triple-level cell (TLC) memory. In this paper, we re-design the internal structure of the combined SLC-TLC storage to improve its performance and lifetime. We also add new behavior by employing the I/O characteristics of the file system journaling to efficiently manage the SLC region inside the storage. We implemented our scheme on a real storage platform and compared its performance with those of the conventional techniques. The results of our evaluation show that our scheme improves the storage performance by up to 65% relative to the conventional techniques.",

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An advanced SLC-buffering for TLC NAND flash-based storage

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Keywords

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