An alternative method for measurement of charge carrier mobility in semiconductors using photocurrent transient response

Il Ho Ahn; Jihoon Kyhm; Juwon Lee; Sangeun Cho; Yongcheol Jo; Deuk Young Kim; Soo Ho Choi; Woochul Yang

doi:10.1016/j.cap.2019.02.002

An alternative method for measurement of charge carrier mobility in semiconductors using photocurrent transient response

Il Ho Ahn, Jihoon Kyhm, Juwon Lee, Sangeun Cho, Yongcheol Jo, Deuk Young Kim, Soo Ho Choi, Woochul Yang

Dongguk University

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We report here a simple alternative method for measuring charge carrier drift mobilities in semiconductor devices. A typical falling photocurrent transient formula for switch-off-state was adjusted to obtain simultaneously electron and hole mobilities. For both undoped ZnO film and InAlAs/InGaAs quantum well structure, electron mobilities extracted from our model were compared with those obtained from maximum-entropy mobility-spectrum analysis method (ME-MSA). Our results demonstrated that electron mobility obtained from our photocurrent response model could serve as substitutes for a representative mobility obtained from ME-MSA.

Original language	English
Pages (from-to)	498-502
Number of pages	5
Journal	Current Applied Physics
Volume	19
Issue number	4
DOIs	https://doi.org/10.1016/j.cap.2019.02.002
State	Published - Apr 2019

Keywords

Mobility spectrum analysis
Photocurrent transient measurement
Variable-magnetic-field Hall measurement

Access to Document

10.1016/j.cap.2019.02.002

Cite this

@article{780ad6e25f4f46fca618f94d7c7f7237,

title = "An alternative method for measurement of charge carrier mobility in semiconductors using photocurrent transient response",

abstract = "We report here a simple alternative method for measuring charge carrier drift mobilities in semiconductor devices. A typical falling photocurrent transient formula for switch-off-state was adjusted to obtain simultaneously electron and hole mobilities. For both undoped ZnO film and InAlAs/InGaAs quantum well structure, electron mobilities extracted from our model were compared with those obtained from maximum-entropy mobility-spectrum analysis method (ME-MSA). Our results demonstrated that electron mobility obtained from our photocurrent response model could serve as substitutes for a representative mobility obtained from ME-MSA.",

keywords = "Mobility spectrum analysis, Photocurrent transient measurement, Variable-magnetic-field Hall measurement",

author = "Ahn, {Il Ho} and Jihoon Kyhm and Juwon Lee and Sangeun Cho and Yongcheol Jo and Kim, {Deuk Young} and Choi, {Soo Ho} and Woochul Yang",

note = "Publisher Copyright: {\textcopyright} 2019 Korean Physical Society",

year = "2019",

month = apr,

doi = "10.1016/j.cap.2019.02.002",

language = "English",

volume = "19",

pages = "498--502",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier B.V.",

number = "4",

}

TY - JOUR

T1 - An alternative method for measurement of charge carrier mobility in semiconductors using photocurrent transient response

AU - Ahn, Il Ho

AU - Kyhm, Jihoon

AU - Lee, Juwon

AU - Cho, Sangeun

AU - Jo, Yongcheol

AU - Kim, Deuk Young

AU - Choi, Soo Ho

AU - Yang, Woochul

PY - 2019/4

Y1 - 2019/4

N2 - We report here a simple alternative method for measuring charge carrier drift mobilities in semiconductor devices. A typical falling photocurrent transient formula for switch-off-state was adjusted to obtain simultaneously electron and hole mobilities. For both undoped ZnO film and InAlAs/InGaAs quantum well structure, electron mobilities extracted from our model were compared with those obtained from maximum-entropy mobility-spectrum analysis method (ME-MSA). Our results demonstrated that electron mobility obtained from our photocurrent response model could serve as substitutes for a representative mobility obtained from ME-MSA.

AB - We report here a simple alternative method for measuring charge carrier drift mobilities in semiconductor devices. A typical falling photocurrent transient formula for switch-off-state was adjusted to obtain simultaneously electron and hole mobilities. For both undoped ZnO film and InAlAs/InGaAs quantum well structure, electron mobilities extracted from our model were compared with those obtained from maximum-entropy mobility-spectrum analysis method (ME-MSA). Our results demonstrated that electron mobility obtained from our photocurrent response model could serve as substitutes for a representative mobility obtained from ME-MSA.

KW - Mobility spectrum analysis

KW - Photocurrent transient measurement

KW - Variable-magnetic-field Hall measurement

UR - http://www.scopus.com/inward/record.url?scp=85060943056&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2019.02.002

DO - 10.1016/j.cap.2019.02.002

M3 - Article

AN - SCOPUS:85060943056

SN - 1567-1739

VL - 19

SP - 498

EP - 502

JO - Current Applied Physics

JF - Current Applied Physics

IS - 4

ER -

An alternative method for measurement of charge carrier mobility in semiconductors using photocurrent transient response

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this