An alternative method for measurement of charge carrier mobility in semiconductors using photocurrent transient response

Il Ho Ahn; Jihoon Kyhm; Juwon Lee; Sangeun Cho; Yongcheol Jo; Deuk Young Kim; Soo Ho Choi; Woochul Yang

doi:10.1016/j.cap.2019.02.002

An alternative method for measurement of charge carrier mobility in semiconductors using photocurrent transient response

Il Ho Ahn
, Jihoon Kyhm
, Juwon Lee
, Sangeun Cho
, Yongcheol Jo
, Deuk Young Kim
, Soo Ho Choi
, Woochul Yang

Dongguk University

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We report here a simple alternative method for measuring charge carrier drift mobilities in semiconductor devices. A typical falling photocurrent transient formula for switch-off-state was adjusted to obtain simultaneously electron and hole mobilities. For both undoped ZnO film and InAlAs/InGaAs quantum well structure, electron mobilities extracted from our model were compared with those obtained from maximum-entropy mobility-spectrum analysis method (ME-MSA). Our results demonstrated that electron mobility obtained from our photocurrent response model could serve as substitutes for a representative mobility obtained from ME-MSA.

Original language	English
Pages (from-to)	498-502
Number of pages	5
Journal	Current Applied Physics
Volume	19
Issue number	4
DOIs	https://doi.org/10.1016/j.cap.2019.02.002
State	Published - Apr 2019

Keywords

Mobility spectrum analysis
Photocurrent transient measurement
Variable-magnetic-field Hall measurement

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10.1016/j.cap.2019.02.002

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@article{780ad6e25f4f46fca618f94d7c7f7237,

title = "An alternative method for measurement of charge carrier mobility in semiconductors using photocurrent transient response",

abstract = "We report here a simple alternative method for measuring charge carrier drift mobilities in semiconductor devices. A typical falling photocurrent transient formula for switch-off-state was adjusted to obtain simultaneously electron and hole mobilities. For both undoped ZnO film and InAlAs/InGaAs quantum well structure, electron mobilities extracted from our model were compared with those obtained from maximum-entropy mobility-spectrum analysis method (ME-MSA). Our results demonstrated that electron mobility obtained from our photocurrent response model could serve as substitutes for a representative mobility obtained from ME-MSA.",

keywords = "Mobility spectrum analysis, Photocurrent transient measurement, Variable-magnetic-field Hall measurement",

author = "Ahn, \{Il Ho\} and Jihoon Kyhm and Juwon Lee and Sangeun Cho and Yongcheol Jo and Kim, \{Deuk Young\} and Choi, \{Soo Ho\} and Woochul Yang",

note = "Publisher Copyright: {\textcopyright} 2019 Korean Physical Society",

year = "2019",

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doi = "10.1016/j.cap.2019.02.002",

language = "English",

volume = "19",

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TY - JOUR

T1 - An alternative method for measurement of charge carrier mobility in semiconductors using photocurrent transient response

AU - Ahn, Il Ho

AU - Kyhm, Jihoon

AU - Lee, Juwon

AU - Cho, Sangeun

AU - Jo, Yongcheol

AU - Kim, Deuk Young

AU - Choi, Soo Ho

AU - Yang, Woochul

PY - 2019/4

Y1 - 2019/4

N2 - We report here a simple alternative method for measuring charge carrier drift mobilities in semiconductor devices. A typical falling photocurrent transient formula for switch-off-state was adjusted to obtain simultaneously electron and hole mobilities. For both undoped ZnO film and InAlAs/InGaAs quantum well structure, electron mobilities extracted from our model were compared with those obtained from maximum-entropy mobility-spectrum analysis method (ME-MSA). Our results demonstrated that electron mobility obtained from our photocurrent response model could serve as substitutes for a representative mobility obtained from ME-MSA.

AB - We report here a simple alternative method for measuring charge carrier drift mobilities in semiconductor devices. A typical falling photocurrent transient formula for switch-off-state was adjusted to obtain simultaneously electron and hole mobilities. For both undoped ZnO film and InAlAs/InGaAs quantum well structure, electron mobilities extracted from our model were compared with those obtained from maximum-entropy mobility-spectrum analysis method (ME-MSA). Our results demonstrated that electron mobility obtained from our photocurrent response model could serve as substitutes for a representative mobility obtained from ME-MSA.

KW - Mobility spectrum analysis

KW - Photocurrent transient measurement

KW - Variable-magnetic-field Hall measurement

UR - https://www.scopus.com/pages/publications/85060943056

U2 - 10.1016/j.cap.2019.02.002

DO - 10.1016/j.cap.2019.02.002

M3 - Article

AN - SCOPUS:85060943056

SN - 1567-1739

VL - 19

SP - 498

EP - 502

JO - Current Applied Physics

JF - Current Applied Physics

IS - 4

ER -

An alternative method for measurement of charge carrier mobility in semiconductors using photocurrent transient response

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Keywords

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