An interdigital BST capacitor with high tunability and low loss tangent

Ki Byoung Kim, Tae Soon Yun, Hyun Suk Kim, Ran Young Kim, Ho Gi Kim, Jong Chul Lee

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

In this paper, a Ba0.6Sr0.4TiO3 (BST) interdigital capacitor on MgO sustrate which allows for a low loss tangent while maintaining high tunability at low bias voltages is presented. The interdigital capacitors with a 50 μm gap and different doped materials of BST thin film are characterized. The tunability of 11.2 % and 28 % are obtained for the undoped BST thin film and for the Mn doped (3 mol %) BST thin film, respectively, at 3.5 GHz and bias voltage of 20 V. Furthermore, loss tangent of the BST thin film is found to be approximately 0.00845 and decreased with Mn doping. Mn doped (3 mol %) BST film is suggested to be an effective candidate for high performance tunable device applications.

Original languageEnglish
Title of host publicationConference Proceedings- 34th European Microwave Conference
Pages161-164
Number of pages4
StatePublished - 2004
EventConference Proceedings- 34th European Microwave Conference - London, United Kingdom
Duration: 12 Oct 200414 Oct 2004

Publication series

NameConference Proceedings- European Microwave Conference
Volume1

Conference

ConferenceConference Proceedings- 34th European Microwave Conference
Country/TerritoryUnited Kingdom
CityLondon
Period12/10/0414/10/04

Keywords

  • BaSrTiO
  • Ferroelectric
  • Interdigital Capacitor
  • Tunable capacitor

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