TY - JOUR
T1 - An investigation on SnS layers for solar cells fabrication with CdS, SnS2 and ZnO window layers prepared by nebulizer spray method
AU - Arulanantham, A. M.S.
AU - Valanarasu, S.
AU - Kathalingam, A.
AU - Shkir, Mohd
AU - Kim, Hyun Seok
N1 - Publisher Copyright:
© 2018, Springer-Verlag GmbH Germany, part of Springer Nature.
PY - 2018/11/1
Y1 - 2018/11/1
N2 - The preparation of SnS, CdS, SnS2 and ZnO thin films by nebulizer spray method, and their characterization is reported. The size of crystallites, dislocation density, texture coefficient and strain were estimated using XRD data. SEM study revealed good surface morphology of films. Optical properties of deposited SnS, CdS, SnS2 and ZnO films were estimated using the optical absorption measurements. The calculated optical energy gaps of CdS, SnS2, ZnO and SnS films were, respectively, found as 2.45, 2.41, 3.2 and 1.45 eV. Hall effect measurements exhibited p-type conductivity for SnS and n-type conductivity for CdS, SnS2, ZnO thin films. The grown SnS thin films showed resistivity and carrier concentration as 0.0689 Ωcm and 1.04 × 1019 cm− 3, respectively. Heterojunction solar cells of FTO/CdS/SnS, FTO/SnS2/SnS, and FTO/ZnO/SnS were also fabricated and their properties studied. The fabricated FTO/ZnO/SnS heterojunction solar cell presented a superior performance with conversion efficiency (0.96%) greater than other structures.
AB - The preparation of SnS, CdS, SnS2 and ZnO thin films by nebulizer spray method, and their characterization is reported. The size of crystallites, dislocation density, texture coefficient and strain were estimated using XRD data. SEM study revealed good surface morphology of films. Optical properties of deposited SnS, CdS, SnS2 and ZnO films were estimated using the optical absorption measurements. The calculated optical energy gaps of CdS, SnS2, ZnO and SnS films were, respectively, found as 2.45, 2.41, 3.2 and 1.45 eV. Hall effect measurements exhibited p-type conductivity for SnS and n-type conductivity for CdS, SnS2, ZnO thin films. The grown SnS thin films showed resistivity and carrier concentration as 0.0689 Ωcm and 1.04 × 1019 cm− 3, respectively. Heterojunction solar cells of FTO/CdS/SnS, FTO/SnS2/SnS, and FTO/ZnO/SnS were also fabricated and their properties studied. The fabricated FTO/ZnO/SnS heterojunction solar cell presented a superior performance with conversion efficiency (0.96%) greater than other structures.
UR - http://www.scopus.com/inward/record.url?scp=85055678203&partnerID=8YFLogxK
U2 - 10.1007/s00339-018-2164-6
DO - 10.1007/s00339-018-2164-6
M3 - Article
AN - SCOPUS:85055678203
SN - 0947-8396
VL - 124
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
IS - 11
M1 - 776
ER -