An x-band bi-directional transmit/receive module for a phased array system in 65-nm CMOS

Van Viet Nguyen, Hyohyun Nam, Young Joe Choe, Bok Hyung Lee, Jung Dong Park

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

We present an X-band bi-directional transmit/receive module (TRM) for a phased array system utilized in radar-based sensor systems. The proposed module, comprising a 6-bit phase shifter, a 6-bit digital step attenuator, and bi-directional gain amplifiers, is fabricated using 65-nm CMOS technology. By constructing passive networks in the phase-shifter and the variable attenuator, the implemented TRM provides amplitude and phase control with 360 phase coverage and 5.625 as the minimum step size while the attenuation range varies from 0 to 31.5 dB with a step size of 0.5 dB. The fabricated T/R module in all of the phase shift states had RMS phase errors of less than 4 and an RMS amplitude error of less than 0.93 dB at 9–11 GHz. The output 1dB gain compression point (OP1dB) of the chip was 5.13 dBm at 10 GHz. The circuit occupies 3.92 × 2.44 mm2 of the chip area and consumes 170 mW of DC power.

Original languageEnglish
Article number2569
JournalSensors
Volume18
Issue number8
DOIs
StatePublished - 6 Aug 2018

Keywords

  • Attenuator
  • Bi-directional gain amplifier
  • Phase shifter
  • Phased array antenna
  • Radar-based sensors
  • T/R module

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