Abstract
In this paper, we present a synapse function using analog resistive-switching behaviors in a SiNx-based memristor with a complementary metal-oxide-semiconductor compatibility and expandability to three-dimensional crossbar array architecture. A progressive conductance change is attainable as a result of the gradual growth and dissolution of the conducting path, and the series resistance of the AlOy layer in the Ni/SiNx/AlOy/TiN memristor device enhances analog switching performance by reducing current overshoot. A continuous and smooth gradual reset switching transition can be observed with a compliance current limit (>100 μA), and is highly suitable for demonstrating synaptic characteristics. Long-term potentiation and long-term depression are obtained by means of identical pulse responses. Moreover, symmetric and linear synaptic behaviors are significantly improved by optimizing pulse response conditions, which is verified by a neural network simulation. Finally, we display the spike-timing-dependent plasticity with the multipulse scheme. This work provides a possible way to mimic biological synapse function for energy-efficient neuromorphic systems by using a conventional passive SiNx layer as an active dielectric.
Original language | English |
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Pages (from-to) | 40420-40427 |
Number of pages | 8 |
Journal | ACS Applied Materials and Interfaces |
Volume | 9 |
Issue number | 46 |
DOIs | |
State | Published - 22 Nov 2017 |
Keywords
- analog resistive switching
- memristor
- silicon nitride
- spike-timing-dependent plasticity
- synapse