Analysis of conduction mechanism in silicon nitride-based RRAM

Sunghun Jung, Sungjun Kim, Jeong Hoon Oh, Kyung Chang Ryoo, Jong Ho Lee, Hyungcheol Shin, Byung Gook Park

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The conduction mechanism in Ti/Si3N4/p-Si memory stack is described. In order to analyse the conduction mechanism, we have measured the I-V characteristics in voltage sweep mode and performed I-V curve fitting. The temperature dependence in Ti/Si3N4/p-Si stacked cell has also been investigated because we cannot identify the conduction mechanism just based on the I-V curve fitting. From I-V curve fitting and temperature measurement data, we have found that space charge limited conduction (SCLC) model is the most probable mechanism in both high resistance state (HRS) and low resistance state (LRS).

Original languageEnglish
Pages (from-to)167-177
Number of pages11
JournalInternational Journal of Nanotechnology
Volume11
Issue number1-4
DOIs
StatePublished - 2014

Keywords

  • Conduction mechanism
  • Metal- insulatorsemiconductor (MIS) structure
  • RRAM
  • SCLC
  • Space charge limited conduction

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