Analysis of DC characteristics in GaN-based metal-insulator-semiconductor high electron mobility transistor with variation of gate dielectric layer composition by considering self-heating effect
- In Tae Hwang
- , Kyu Won Jang
- , Hyun Jung Kim
- , Sang Heung Lee
- , Jong Won Lim
- , Jin Mo Yang
- , Ho Sang Kwon
- , Hyun Seok Kim
Research output: Contribution to journal › Article › peer-review
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