Analysis of DC characteristics in GaN-based metal-insulator-semiconductor high electron mobility transistor with variation of gate dielectric layer composition by considering self-heating effect
- In Tae Hwang
- , Kyu Won Jang
- , Hyun Jung Kim
- , Sang Heung Lee
- , Jong Won Lim
- , Jin Mo Yang
- , Ho Sang Kwon
- , Hyun Seok Kim
- Dongguk University
- Electronics and Telecommunications Research Institute
- Korean Agency for Defense Development
Research output: Contribution to journal › Article › peer-review
7
Scopus
citations