TY - GEN
T1 - Analysis of ITO films deposited on various polymer substrates for high-resolution plastic film LCDs
AU - Han, Jeong In
AU - Park, Sung Kyu
AU - Lee, Chan Jae
AU - Kim, Won Keun
AU - Kwak, Min Gi
PY - 2001
Y1 - 2001
N2 - The electrical and mechanical properties in indium-tin-oxide films deposited on polymer substrate were examined. The materials of substrates are polyethersulfone(PES), polycarbonate(PC), polyethylene terephthalate(PET) which have gas barrier layer and anti-glare coating for plastic-based devices. The experiments were performed by rf-magnetron sputtering using a special instrument and buffer layers. Therefore, we obtained a very flat polymer substrate deposited ITO film and investigated the effects of buffer layers, in addition to the instrument. Moreover, the influences of an oxygen partial pressure and post-deposition annealing in ITO films deposited on polymer substrates were clarified. X-ray diffraction observation, measurement of electrical property, and optical microscope observation were performed for the investigation of micro-structure and electro-mechanical properties. They indicated that as-deposited ITO thin films are amorphous and become quasi-crystalline after adjustment of oxygen partial pressure and thermal annealing above 180 C. As the results, we obtained 20-25 Ω/ of ITO films with a good transmittance (above 80%) under 0.2 % oxygen contents and vacuum annealing. Furthermore, using organic buffer layer, we obtained ITO films which have rather high electrical resistance (40-45 Ω/) but have improved optical (more than 85%) and mechanical characteristics compared to the counterparts.
AB - The electrical and mechanical properties in indium-tin-oxide films deposited on polymer substrate were examined. The materials of substrates are polyethersulfone(PES), polycarbonate(PC), polyethylene terephthalate(PET) which have gas barrier layer and anti-glare coating for plastic-based devices. The experiments were performed by rf-magnetron sputtering using a special instrument and buffer layers. Therefore, we obtained a very flat polymer substrate deposited ITO film and investigated the effects of buffer layers, in addition to the instrument. Moreover, the influences of an oxygen partial pressure and post-deposition annealing in ITO films deposited on polymer substrates were clarified. X-ray diffraction observation, measurement of electrical property, and optical microscope observation were performed for the investigation of micro-structure and electro-mechanical properties. They indicated that as-deposited ITO thin films are amorphous and become quasi-crystalline after adjustment of oxygen partial pressure and thermal annealing above 180 C. As the results, we obtained 20-25 Ω/ of ITO films with a good transmittance (above 80%) under 0.2 % oxygen contents and vacuum annealing. Furthermore, using organic buffer layer, we obtained ITO films which have rather high electrical resistance (40-45 Ω/) but have improved optical (more than 85%) and mechanical characteristics compared to the counterparts.
UR - http://www.scopus.com/inward/record.url?scp=34249910921&partnerID=8YFLogxK
U2 - 10.1557/proc-685-d5.5.1
DO - 10.1557/proc-685-d5.5.1
M3 - Conference contribution
AN - SCOPUS:34249910921
SN - 1558996214
SN - 9781558996212
T3 - Materials Research Society Symposium Proceedings
SP - 112
EP - 119
BT - Advanced Materials and Devices for Large-Area Electronics
PB - Materials Research Society
T2 - 2001 MRS Spring Meeting
Y2 - 16 April 2001 through 20 April 2001
ER -