@inproceedings{90f10ee1309345a48d50cf99f06c964f,
title = "Analysis of Resistive Switching Mechanism in Hexagonal Boron Nitride 2D Material Based Memristive Device",
abstract = "This paper examines the forming-free bipolar resistive switching dynamics in chemically synthesised Hexagonal Boron-Nitride (hBN) 2D-material-based memristive devices. The fabricated MIM (Metal-Insulator-Metal) structure memristive device has Pt (platinum) as a bottom electrode (BE), Cu (copper) as a top electrode (TE), and hBN 2D material used as a resistive switching layer. The crystal structure and surface micro-structure of synthesised hBN have been characterised using X-Ray Diffractometer (XRD)and Field Emission Scanning Electron Microscope (FESEM). The fabricated device's electrical response has been observed using a 4200 Keithley parametric analyser with a low sweeping voltage (-1.5V /1.5V). The fabricated device has well-performed resistive switching dynamics with the typical set (0. 75V) voltage and also shows a good switching window (50) for continuous 2000 consecutive cycles.",
keywords = "2D-material, Forming Voltage, Resistive switching, Switching Window",
author = "Harsh Ranjan and Singh, {Chandra Prakash} and Singh, {Vivek Pratap} and Pandey, {Saurabh Kumar}",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 23rd IEEE International Conference on Nanotechnology, NANO 2023 ; Conference date: 02-07-2023 Through 05-07-2023",
year = "2023",
doi = "10.1109/NANO58406.2023.10231194",
language = "English",
series = "Proceedings of the IEEE Conference on Nanotechnology",
publisher = "IEEE Computer Society",
pages = "359--362",
booktitle = "2023 IEEE 23rd International Conference on Nanotechnology, NANO 2023",
address = "United States",
}