Analysis of resonant tunneling in a GaAs/AlAs double-barrier structure under very high hydrostatic pressures

Yongmin Kim; N. Y. Kim; I. M. Hyunsik

Analysis of resonant tunneling in a GaAs/AlAs double-barrier structure under very high hydrostatic pressures

Yongmin Kim, N. Y. Kim, I. M. Hyunsik

Division of System Semiconductor

Dongguk University

Research output: Contribution to journal › Article › peer-review

Abstract

We theoretically analyze the characteristics of the Γ resonance as a function of hydrostatic pressure. Charge accumulation in the emitter and collector X states is taken into account. Pinning effect between the emitter AlAs X and GaAs Γ states is also considered in the high-pressure region (> 6 kbar). It is clearly demonstrated that the increase in valley current is due to the collector AlAs. We evaluate a new effective mass of the longitudinal X state of an AlAs quantum well, modeling the pressure dependence of the resonant bias position. The transfer matrix method and self-consistent Schrodinger-Poisson calculations are used as main modeling tools.

Original language	English
Pages (from-to)	S626-S629
Journal	Journal of the Korean Physical Society
Volume	45
Issue number	SUPPL.
State	Published - Dec 2004

Keywords

GaAs/AlAs Double barrier structure
Hetero-structure
Hydrostatic pressure
Resonant tunneling
Transfer matrix
X-conduction band

Cite this

@article{87e5e76b23af48e1aea46e2d4c308f33,

title = "Analysis of resonant tunneling in a GaAs/AlAs double-barrier structure under very high hydrostatic pressures",

abstract = "We theoretically analyze the characteristics of the Γ resonance as a function of hydrostatic pressure. Charge accumulation in the emitter and collector X states is taken into account. Pinning effect between the emitter AlAs X and GaAs Γ states is also considered in the high-pressure region (> 6 kbar). It is clearly demonstrated that the increase in valley current is due to the collector AlAs. We evaluate a new effective mass of the longitudinal X state of an AlAs quantum well, modeling the pressure dependence of the resonant bias position. The transfer matrix method and self-consistent Schrodinger-Poisson calculations are used as main modeling tools.",

keywords = "GaAs/AlAs Double barrier structure, Hetero-structure, Hydrostatic pressure, Resonant tunneling, Transfer matrix, X-conduction band",

author = "Yongmin Kim and Kim, {N. Y.} and Hyunsik, {I. M.}",

year = "2004",

month = dec,

language = "English",

volume = "45",

pages = "S626--S629",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "SUPPL.",

}

TY - JOUR

T1 - Analysis of resonant tunneling in a GaAs/AlAs double-barrier structure under very high hydrostatic pressures

AU - Kim, Yongmin

AU - Kim, N. Y.

AU - Hyunsik, I. M.

PY - 2004/12

Y1 - 2004/12

N2 - We theoretically analyze the characteristics of the Γ resonance as a function of hydrostatic pressure. Charge accumulation in the emitter and collector X states is taken into account. Pinning effect between the emitter AlAs X and GaAs Γ states is also considered in the high-pressure region (> 6 kbar). It is clearly demonstrated that the increase in valley current is due to the collector AlAs. We evaluate a new effective mass of the longitudinal X state of an AlAs quantum well, modeling the pressure dependence of the resonant bias position. The transfer matrix method and self-consistent Schrodinger-Poisson calculations are used as main modeling tools.

AB - We theoretically analyze the characteristics of the Γ resonance as a function of hydrostatic pressure. Charge accumulation in the emitter and collector X states is taken into account. Pinning effect between the emitter AlAs X and GaAs Γ states is also considered in the high-pressure region (> 6 kbar). It is clearly demonstrated that the increase in valley current is due to the collector AlAs. We evaluate a new effective mass of the longitudinal X state of an AlAs quantum well, modeling the pressure dependence of the resonant bias position. The transfer matrix method and self-consistent Schrodinger-Poisson calculations are used as main modeling tools.

KW - GaAs/AlAs Double barrier structure

KW - Hetero-structure

KW - Hydrostatic pressure

KW - Resonant tunneling

KW - Transfer matrix

KW - X-conduction band

UR - http://www.scopus.com/inward/record.url?scp=12744276048&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:12744276048

SN - 0374-4884

VL - 45

SP - S626-S629

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - SUPPL.

ER -

Analysis of resonant tunneling in a GaAs/AlAs double-barrier structure under very high hydrostatic pressures

Abstract

Keywords

Other files and links

Fingerprint

Cite this