Analysis of resonant tunneling in a GaAs/AlAs double-barrier structure under very high hydrostatic pressures

We theoretically analyze the characteristics of the Γ resonance as a function of hydrostatic pressure. Charge accumulation in the emitter and collector X states is taken into account. Pinning effect between the emitter AlAs X and GaAs Γ states is also considered in the high-pressure region (> 6 kbar). It is clearly demonstrated that the increase in valley current is due to the collector AlAs. We evaluate a new effective mass of the longitudinal X state of an AlAs quantum well, modeling the pressure dependence of the resonant bias position. The transfer matrix method and self-consistent Schrodinger-Poisson calculations are used as main modeling tools.