Analysis of stability degradation of SRAMs using a physics-based PBTI model

Chih Hsiang Ho, Mohammad Khaled Hassan, Soo Youn Kim, Kaushik Roy

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

For the static random access memories (SRAMs) with high-(k)metal gate transistors, positive bias temperature instability (PBTI)-induced stability degradation can be significant. In this letter, we analyze the temporal variations of the READ/WRITE operations and static noise margin of a conventional 6T-SRAM cell using a physics-based PBTI model. We show that the dependence of BTI effects on intrinsic variations and the design parameters of SRAM are significant A 10 mV increase in intrinsic variations can lead to double the BTI-induced read failure rate. Furthermore, SRAM is more sensitive to PBTI effects as compared with negative bias temperature instability These results validate that stochastic modeling of PBTI is required for reliable SRAM design.

Original languageEnglish
Article number6868239
Pages (from-to)951-953
Number of pages3
JournalIEEE Electron Device Letters
Volume35
Issue number9
DOIs
StatePublished - Sep 2014

Keywords

  • negative bias temperature instability (NBTI)
  • positive bias temperature instability (PBTI)
  • static noise margin (SNM)
  • Static random access memory (SRAM)

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