Analysis of the short-channel effect in 50 nm InAlAs/InGaAs metamorphic high electron mobility transistors

Jae Seo Lee, Jung Hun Oh, Byeong Ok Lim, Jin Koo Rhee, Sam Dong Kim

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We fabricate 50-nm In AlAs/InGaAs metamorphic high electron mobility transistors and investigate the short-channel effect by using a numerical analysis based on the hydrodynamic model. Our numerical approach is validated by comparing the computed values with the I-V characteristics measured from the fabricated devices at various bias conditions. From the analysis, we propose two different causes for the short-channel effect, depending on the gate bias condition. At small gate voltages of 0 ∼ -0.3 V, overflow of hot-electrons from the channel toward the buffer layers contribute to the non-zero output conductance at high Vds and the amount of this current component is quite significant and ∼1/6 the peak current density in the channel at a drain voltage of 1.6 V. At a higher gate voltage of -0.6 V, drain-induced barrier lowering plays a role in the significant increase of the output conductance above a drain voltage of 0.5 V.

Original languageEnglish
Pages (from-to)3267-3272
Number of pages6
JournalJournal of the Korean Physical Society
Volume53
Issue number6
DOIs
StatePublished - Dec 2008

Keywords

  • Buffer current
  • Drain-induced barrier lowering (DIBL)
  • Hydrodynamic model
  • Metamorphic high electron mobility transistor (MHEMT)
  • Short-channel effects

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