Abstract
We fabricate 50-nm In AlAs/InGaAs metamorphic high electron mobility transistors and investigate the short-channel effect by using a numerical analysis based on the hydrodynamic model. Our numerical approach is validated by comparing the computed values with the I-V characteristics measured from the fabricated devices at various bias conditions. From the analysis, we propose two different causes for the short-channel effect, depending on the gate bias condition. At small gate voltages of 0 ∼ -0.3 V, overflow of hot-electrons from the channel toward the buffer layers contribute to the non-zero output conductance at high Vds and the amount of this current component is quite significant and ∼1/6 the peak current density in the channel at a drain voltage of 1.6 V. At a higher gate voltage of -0.6 V, drain-induced barrier lowering plays a role in the significant increase of the output conductance above a drain voltage of 0.5 V.
Original language | English |
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Pages (from-to) | 3267-3272 |
Number of pages | 6 |
Journal | Journal of the Korean Physical Society |
Volume | 53 |
Issue number | 6 |
DOIs | |
State | Published - Dec 2008 |
Keywords
- Buffer current
- Drain-induced barrier lowering (DIBL)
- Hydrodynamic model
- Metamorphic high electron mobility transistor (MHEMT)
- Short-channel effects