Analysis on the characteristics of low-k benzo-cyclo-butene passivation

W. S. Sul; H. J. Han; H. S. Lee; B. H. Lee; S. D. Kim; J. K. Rhee

Analysis on the characteristics of low-k benzo-cyclo-butene passivation

W. S. Sul, H. J. Han, H. S. Lee, B. H. Lee, S. D. Kim, J. K. Rhee

Department of Electronics & Electrical Engineering

Dongguk University

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Surface passivation for the devices is very important for ensuring the DC and RF performances as well as the reliability in pseudomorphic high electron mobility transistors (PHEMT's). We performed the comparative study on the DC. RF and noise characteristics of the 0.1 μm gate length PHEMT's passivated by low dielectric constant benzo-cyclo-butene (BCB) layers with those passivated by the conventional Si₃N₄, or the. The noise performance of the BCB passivation for the PHEMT's was much superior to that of the Si₃N₄, whereas the DC and other RF properties were not significantly affected by the passivation materials.

Original language	English
Pages (from-to)	267-272
Number of pages	6
Journal	Materials Research Society Symposium Proceedings
Volume	734
State	Published - 2003
Event	Polymer/Metal Interfaces and Defect Mediated Phenomena in Ordered Polymers - Boston, MA, United States Duration: 2 Dec 2002 → 6 Dec 2002

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title = "Analysis on the characteristics of low-k benzo-cyclo-butene passivation",

abstract = "Surface passivation for the devices is very important for ensuring the DC and RF performances as well as the reliability in pseudomorphic high electron mobility transistors (PHEMT's). We performed the comparative study on the DC. RF and noise characteristics of the 0.1 μm gate length PHEMT's passivated by low dielectric constant benzo-cyclo-butene (BCB) layers with those passivated by the conventional Si3N4, or the. The noise performance of the BCB passivation for the PHEMT's was much superior to that of the Si3N4, whereas the DC and other RF properties were not significantly affected by the passivation materials.",

author = "Sul, {W. S.} and Han, {H. J.} and Lee, {H. S.} and Lee, {B. H.} and Kim, {S. D.} and Rhee, {J. K.}",

year = "2003",

language = "English",

volume = "734",

pages = "267--272",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Springer International Publishing AG",

note = "Polymer/Metal Interfaces and Defect Mediated Phenomena in Ordered Polymers ; Conference date: 02-12-2002 Through 06-12-2002",

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TY - JOUR

T1 - Analysis on the characteristics of low-k benzo-cyclo-butene passivation

AU - Sul, W. S.

AU - Han, H. J.

AU - Lee, H. S.

AU - Lee, B. H.

AU - Kim, S. D.

AU - Rhee, J. K.

PY - 2003

Y1 - 2003

N2 - Surface passivation for the devices is very important for ensuring the DC and RF performances as well as the reliability in pseudomorphic high electron mobility transistors (PHEMT's). We performed the comparative study on the DC. RF and noise characteristics of the 0.1 μm gate length PHEMT's passivated by low dielectric constant benzo-cyclo-butene (BCB) layers with those passivated by the conventional Si3N4, or the. The noise performance of the BCB passivation for the PHEMT's was much superior to that of the Si3N4, whereas the DC and other RF properties were not significantly affected by the passivation materials.

AB - Surface passivation for the devices is very important for ensuring the DC and RF performances as well as the reliability in pseudomorphic high electron mobility transistors (PHEMT's). We performed the comparative study on the DC. RF and noise characteristics of the 0.1 μm gate length PHEMT's passivated by low dielectric constant benzo-cyclo-butene (BCB) layers with those passivated by the conventional Si3N4, or the. The noise performance of the BCB passivation for the PHEMT's was much superior to that of the Si3N4, whereas the DC and other RF properties were not significantly affected by the passivation materials.

UR - http://www.scopus.com/inward/record.url?scp=0038310997&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0038310997

SN - 0272-9172

VL - 734

SP - 267

EP - 272

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

T2 - Polymer/Metal Interfaces and Defect Mediated Phenomena in Ordered Polymers

Y2 - 2 December 2002 through 6 December 2002

ER -

Analysis on the characteristics of low-k benzo-cyclo-butene passivation

Abstract

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