@inproceedings{2cdfa6b5674c4a619f3e0beab88baad6,
title = "Analysis on the low-k benzo-cyclo-butene passivation of psuedomorphic high electron mobility transistors",
abstract = "In pseudomorphic high electron mobility transistors (PHEMT's), surface passivation for the devices is very important for ensuring the DC and RF performances as well as the reliability. We performed the comparative study on the DC, RF and noise characteristics of the 0, 1 μm gate length PHEMT's passivated by either the conventional Si3N4 or the low dielectric constant benzo-cyclo-butene (BCB) layers. The noise performance of the BCB passivation for the PHEMT's was much superior to that of the Si3N4, whereas the DC and other RF properties were not significantly affected by the passivation materials.",
author = "Sul, {Woo Suk} and Han, {Hyo Jong} and Lim, {Byoung Ok} and Lee, {Bok Hyoung} and Lee, {Sung Dae} and Kim, {Mi Ra} and Kim, {Sam Dong} and Rhee, {Jin Koo}",
note = "Publisher Copyright: {\textcopyright} 2002 IEEE.; Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 ; Conference date: 11-12-2002 Through 13-12-2002",
year = "2002",
doi = "10.1109/COMMAD.2002.1237262",
language = "English",
series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "349--352",
editor = "Michael Gal",
booktitle = "2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings",
address = "United States",
}