Analysis on the low-k benzo-cyclo-butene passivation of psuedomorphic high electron mobility transistors

Woo Suk Sul, Hyo Jong Han, Byoung Ok Lim, Bok Hyoung Lee, Sung Dae Lee, Mi Ra Kim, Sam Dong Kim, Jin Koo Rhee

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

In pseudomorphic high electron mobility transistors (PHEMT's), surface passivation for the devices is very important for ensuring the DC and RF performances as well as the reliability. We performed the comparative study on the DC, RF and noise characteristics of the 0, 1 μm gate length PHEMT's passivated by either the conventional Si3N4 or the low dielectric constant benzo-cyclo-butene (BCB) layers. The noise performance of the BCB passivation for the PHEMT's was much superior to that of the Si3N4, whereas the DC and other RF properties were not significantly affected by the passivation materials.

Original languageEnglish
Title of host publication2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings
EditorsMichael Gal
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages349-352
Number of pages4
ISBN (Electronic)0780375718
DOIs
StatePublished - 2002
EventConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Sydney, Australia
Duration: 11 Dec 200213 Dec 2002

Publication series

NameConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
Volume2002-January

Conference

ConferenceConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002
Country/TerritoryAustralia
CitySydney
Period11/12/0213/12/02

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