@inproceedings{95f36c3ed5a0498d8eb4c34434d5272d,
title = "Analytical calculation and fabrication of FET-embedded capacitive micromachined ultrasonic transducer",
abstract = "In this paper, we present a full analytical model that can simulate an entire CMUT-FET structure with high accuracy and fast computation. Using the proposed analytical model, electromechanical properties, electrical characteristics (Id-Vg), and pressure sensitivity of the CMUT-FET are simulated and analyzed. The optimal bias point of the CMUT-FET is found to be 1.3 V (Sub-threshold operation), at which the calculated pressure sensitivity is 2.584 × 10-6 Pa-1. This optimum bias point is almost 11 times lower than 80 \% pull-in voltage for conventional high-frequency CMUTs. As a consecutive work, we also report on a fabrication process of the CMUT-FET with nickel-silicided source/drain junctions and low-temperature wafer bonding. The low-temperature wafer bonding successfully demonstrates the direct integration of CMUT on FET, which is verified via cross-sectional inspection. The fabrication technique is a promising solution and can be developed further to for integration with ICs.",
keywords = "Analytical model, Field-effect transistor-embedded capacitive micromachined ultrasonic transducer (CMUT-FET), High-frequency operation, Low-temperature wafer bonding",
author = "Park, \{Jin Soo\} and Kim, \{Jung Yeon\} and Lee, \{Ji Hoon\} and Bae, \{Hee Kyoung\} and Jinsik Kim and Hwang, \{Kyo Seon\} and Park, \{Jung Ho\} and Rino Choi and Lee, \{Byung Chul\}",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 2017 IEEE International Ultrasonics Symposium, IUS 2017 ; Conference date: 06-09-2017 Through 09-09-2017",
year = "2017",
month = oct,
day = "31",
doi = "10.1109/ULTSYM.2017.8092012",
language = "English",
series = "IEEE International Ultrasonics Symposium, IUS",
publisher = "IEEE Computer Society",
booktitle = "2017 IEEE International Ultrasonics Symposium, IUS 2017",
address = "United States",
}