Abstract
This paper reports the conductivity type conversion of ZnO nanorod thin film by annealing. The n-type conductivity of hydrothermally prepared ZnO nanorods was changed to p-type ZnO through thermal treatment in air ambient without doping process. The ZnO nanorod films were grown on p-Si (1 1 1) and p+-Si (1 0 0) substrates by hydrothermal method. SEM and XRD measurements showed the excellent crystalline quality and uniform morphology of the grown ZnO nanorod films. Furthermore, substrate and annealing temperature-dependent I-V responses of the films were also studied. A Schottky diode type behavior was shown by ZnO NRs grown on low resistive p-type silicon with a reasonable photoconversion efficiency.
Original language | English |
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Pages (from-to) | 30-32 |
Number of pages | 3 |
Journal | Materials Letters |
Volume | 196 |
DOIs | |
State | Published - 1 Jun 2017 |
Keywords
- n-ZnO/p-Si heterojunction
- p-Type doping
- Substrate variation
- Thermal treatment
- ZnO nanorods