Annealing induced p-type conversion and substrate dependent effect of n-ZnO/p-Si heterostructure

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Abstract

This paper reports the conductivity type conversion of ZnO nanorod thin film by annealing. The n-type conductivity of hydrothermally prepared ZnO nanorods was changed to p-type ZnO through thermal treatment in air ambient without doping process. The ZnO nanorod films were grown on p-Si (1 1 1) and p+-Si (1 0 0) substrates by hydrothermal method. SEM and XRD measurements showed the excellent crystalline quality and uniform morphology of the grown ZnO nanorod films. Furthermore, substrate and annealing temperature-dependent I-V responses of the films were also studied. A Schottky diode type behavior was shown by ZnO NRs grown on low resistive p-type silicon with a reasonable photoconversion efficiency.

Original languageEnglish
Pages (from-to)30-32
Number of pages3
JournalMaterials Letters
Volume196
DOIs
StatePublished - 1 Jun 2017

Keywords

  • n-ZnO/p-Si heterojunction
  • p-Type doping
  • Substrate variation
  • Thermal treatment
  • ZnO nanorods

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