Ano expresspen accessgan nanorods grown on si (111) infstrates and exciton localization

Young S. Park, Mark J. Holmes, Y. Shon, Im Taek Yoon, Hyunsik Im, Robert A. Taylor

Research output: Contribution to journalArticlepeer-review

Abstract

We have investigated exciton localization in binary GaN nanorods using micro- and time-resolved photoluminescence measurements. The temperature dependence of the photoluminescence has been measured, and several phonon replicas have been observed at the lower energy side of the exciton bound to basal stacking faults (I1). By analyzing the Huang-Rhys parameters as a function of temperature, deduced from the phonon replica intensities, we have found that the excitons are strongly localized in the lower energy tails. The lifetimes of the I1 and I2 transitions were measured to be < 100 ps due to enhanced surface recombination. PACS: 78.47.+p, 78.55.-m, 78.55.Cr, 78.66.-w, 78.66.Fd.

Original languageEnglish
Pages (from-to)X1-5
JournalNanoscale Research Letters
Volume6
Issue number1
StatePublished - Jan 2011

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