Anodically fabricated self-organized nanoporous tin oxide film as a supercapacitor electrode material

Dipak V. Shinde; Deok Yeon Lee; Supriya A. Patil; Iseul Lim; Sambhaji S. Bhande; Wonjoo Lee; Myung Mo Sung; Rajaram S. Mane; Nabeen K. Shrestha; Sung Hwan Han

doi:10.1039/c3ra22721a

Anodically fabricated self-organized nanoporous tin oxide film as a supercapacitor electrode material

Dipak V. Shinde
, Deok Yeon Lee
, Supriya A. Patil
, Iseul Lim
, Sambhaji S. Bhande
, Wonjoo Lee
, Myung Mo Sung
, Rajaram S. Mane
, Nabeen K. Shrestha
, Sung Hwan Han

Division of System Semiconductor

Research output: Contribution to journal › Article › peer-review

35 Scopus citations

Abstract

Self-organized nanoporous tin oxide films were fabricated by anodizing a tin substrate in an aqueous electrolyte containing oxalic or phosphoric acid. The films were characterized using FE-SEM, XRD, XPS, and TGA. In addition, the supercapacitive properties of the porous oxide films were measured using cyclic voltammetry and galvanostatic charge/discharge technique. The film demonstrated a maximum specific capacitance of 274 F g^-1 with long life in electrochemical charge/discharge cycles.

Original language	English
Pages (from-to)	9431-9435
Number of pages	5
Journal	RSC Advances
Volume	3
Issue number	24
DOIs	https://doi.org/10.1039/c3ra22721a
State	Published - 2013

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title = "Anodically fabricated self-organized nanoporous tin oxide film as a supercapacitor electrode material",

abstract = "Self-organized nanoporous tin oxide films were fabricated by anodizing a tin substrate in an aqueous electrolyte containing oxalic or phosphoric acid. The films were characterized using FE-SEM, XRD, XPS, and TGA. In addition, the supercapacitive properties of the porous oxide films were measured using cyclic voltammetry and galvanostatic charge/discharge technique. The film demonstrated a maximum specific capacitance of 274 F g-1 with long life in electrochemical charge/discharge cycles.",

author = "Shinde, \{Dipak V.\} and Lee, \{Deok Yeon\} and Patil, \{Supriya A.\} and Iseul Lim and Bhande, \{Sambhaji S.\} and Wonjoo Lee and Sung, \{Myung Mo\} and Mane, \{Rajaram S.\} and Shrestha, \{Nabeen K.\} and Han, \{Sung Hwan\}",

year = "2013",

doi = "10.1039/c3ra22721a",

language = "English",

volume = "3",

pages = "9431--9435",

journal = "RSC Advances",

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publisher = "Royal Society of Chemistry",

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T1 - Anodically fabricated self-organized nanoporous tin oxide film as a supercapacitor electrode material

AU - Shinde, Dipak V.

AU - Lee, Deok Yeon

AU - Patil, Supriya A.

AU - Lim, Iseul

AU - Bhande, Sambhaji S.

AU - Lee, Wonjoo

AU - Sung, Myung Mo

AU - Mane, Rajaram S.

AU - Shrestha, Nabeen K.

AU - Han, Sung Hwan

PY - 2013

Y1 - 2013

N2 - Self-organized nanoporous tin oxide films were fabricated by anodizing a tin substrate in an aqueous electrolyte containing oxalic or phosphoric acid. The films were characterized using FE-SEM, XRD, XPS, and TGA. In addition, the supercapacitive properties of the porous oxide films were measured using cyclic voltammetry and galvanostatic charge/discharge technique. The film demonstrated a maximum specific capacitance of 274 F g-1 with long life in electrochemical charge/discharge cycles.

AB - Self-organized nanoporous tin oxide films were fabricated by anodizing a tin substrate in an aqueous electrolyte containing oxalic or phosphoric acid. The films were characterized using FE-SEM, XRD, XPS, and TGA. In addition, the supercapacitive properties of the porous oxide films were measured using cyclic voltammetry and galvanostatic charge/discharge technique. The film demonstrated a maximum specific capacitance of 274 F g-1 with long life in electrochemical charge/discharge cycles.

UR - https://www.scopus.com/pages/publications/84878732398

U2 - 10.1039/c3ra22721a

DO - 10.1039/c3ra22721a

M3 - Article

AN - SCOPUS:84878732398

SN - 2046-2069

VL - 3

SP - 9431

EP - 9435

JO - RSC Advances

JF - RSC Advances

IS - 24

ER -

Anodically fabricated self-organized nanoporous tin oxide film as a supercapacitor electrode material

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