Artificial Synapse Emulated by Indium Tin Oxide/SiN/TaN Resistive Switching Device for Neuromorphic System

Dongyeol Ju; Sunghun Kim; Sungjun Kim

doi:10.3390/nano13172477

Artificial Synapse Emulated by Indium Tin Oxide/SiN/TaN Resistive Switching Device for Neuromorphic System

Dongyeol Ju, Sunghun Kim, Sungjun Kim

Department of Electronics & Electrical Engineering

Dongguk University

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

In this paper, we fabricate an ITO/SiN/TaN memristor device and analyze its electrical characteristics for a neuromorphic system. The device structure and chemical properties are investigated using transmission electron microscopy and X-ray photoelectron spectroscopy. Uniform bipolar switching is achieved through DC sweep under a compliance current of 5 mA. Also, the analog reset phenomenon is observed by modulating the reset voltage for long-term memory. Additionally, short-term memory characteristics are obtained by controlling the strength of the pulse response. Finally, bio-inspired synaptic characteristics are emulated using Hebbian learning rules such as spike-rate-dependent plasticity (SRDP) and spike-timing-dependent plasticity (STDP). As a result, we believe that the coexistence of short-term and long-term memories in the ITO/SiN/TaN device can provide flexibility in device design in future neuromorphic applications.

Original language	English
Article number	2477
Journal	Nanomaterials
Volume	13
Issue number	17
DOIs	https://doi.org/10.3390/nano13172477
State	Published - Sep 2023

Keywords

Hebbian learning rules
neuromorphic system
resistive switching
short-term memory
synaptic plasticity

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10.3390/nano13172477

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title = "Artificial Synapse Emulated by Indium Tin Oxide/SiN/TaN Resistive Switching Device for Neuromorphic System",

abstract = "In this paper, we fabricate an ITO/SiN/TaN memristor device and analyze its electrical characteristics for a neuromorphic system. The device structure and chemical properties are investigated using transmission electron microscopy and X-ray photoelectron spectroscopy. Uniform bipolar switching is achieved through DC sweep under a compliance current of 5 mA. Also, the analog reset phenomenon is observed by modulating the reset voltage for long-term memory. Additionally, short-term memory characteristics are obtained by controlling the strength of the pulse response. Finally, bio-inspired synaptic characteristics are emulated using Hebbian learning rules such as spike-rate-dependent plasticity (SRDP) and spike-timing-dependent plasticity (STDP). As a result, we believe that the coexistence of short-term and long-term memories in the ITO/SiN/TaN device can provide flexibility in device design in future neuromorphic applications.",

keywords = "Hebbian learning rules, neuromorphic system, resistive switching, short-term memory, synaptic plasticity",

author = "Dongyeol Ju and Sunghun Kim and Sungjun Kim",

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T1 - Artificial Synapse Emulated by Indium Tin Oxide/SiN/TaN Resistive Switching Device for Neuromorphic System

AU - Ju, Dongyeol

AU - Kim, Sunghun

AU - Kim, Sungjun

PY - 2023/9

Y1 - 2023/9

N2 - In this paper, we fabricate an ITO/SiN/TaN memristor device and analyze its electrical characteristics for a neuromorphic system. The device structure and chemical properties are investigated using transmission electron microscopy and X-ray photoelectron spectroscopy. Uniform bipolar switching is achieved through DC sweep under a compliance current of 5 mA. Also, the analog reset phenomenon is observed by modulating the reset voltage for long-term memory. Additionally, short-term memory characteristics are obtained by controlling the strength of the pulse response. Finally, bio-inspired synaptic characteristics are emulated using Hebbian learning rules such as spike-rate-dependent plasticity (SRDP) and spike-timing-dependent plasticity (STDP). As a result, we believe that the coexistence of short-term and long-term memories in the ITO/SiN/TaN device can provide flexibility in device design in future neuromorphic applications.

AB - In this paper, we fabricate an ITO/SiN/TaN memristor device and analyze its electrical characteristics for a neuromorphic system. The device structure and chemical properties are investigated using transmission electron microscopy and X-ray photoelectron spectroscopy. Uniform bipolar switching is achieved through DC sweep under a compliance current of 5 mA. Also, the analog reset phenomenon is observed by modulating the reset voltage for long-term memory. Additionally, short-term memory characteristics are obtained by controlling the strength of the pulse response. Finally, bio-inspired synaptic characteristics are emulated using Hebbian learning rules such as spike-rate-dependent plasticity (SRDP) and spike-timing-dependent plasticity (STDP). As a result, we believe that the coexistence of short-term and long-term memories in the ITO/SiN/TaN device can provide flexibility in device design in future neuromorphic applications.

KW - Hebbian learning rules

KW - neuromorphic system

KW - resistive switching

KW - short-term memory

KW - synaptic plasticity

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DO - 10.3390/nano13172477

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JF - Nanomaterials

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Artificial Synapse Emulated by Indium Tin Oxide/SiN/TaN Resistive Switching Device for Neuromorphic System

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