Asymmetric supercapacitor properties of fern-like nanostructured NiCo₂S₄ synthesized through a one-pot simple solvothermal method

Nanoarchitectures of ternary NiCo₂S₄ are desirable for the development of advanced high-performance supercapacitors. Herein, we demonstrate a simple solvothermal synthesis procedure for a fern-like nanoarchitecture of NiCo₂S₄ on Ni foam. The electrode exhibits a good areal capacity of approximately 1.55F cm⁻² at a current density of 10 mA cm⁻², while the ASC device exhibits an areal capacity of approximately 1.02 F cm⁻² at 12 mA cm⁻² and retention of 75.3% over 8000 charge–discharge cycles.