Atomic arrangements of (Ga1-x Mnx) N nanorods grown on Al2 O3 substrates

K. H. Lee; J. Y. Lee; J. H. Jung; T. W. Kim; H. C. Jeon; T. W. Kang

doi:10.1063/1.2902321

Atomic arrangements of (Ga1-x Mnx) N nanorods grown on Al2 O3 substrates

K. H. Lee, J. Y. Lee, J. H. Jung, T. W. Kim, H. C. Jeon, T. W. Kang

Quantum-Functional Semiconductor Research Center

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

X-ray diffraction (XRD) and selected area electron diffraction pattern (SADP) results showed that the (Ga1-x Mnx) N nanorods had preferential c -axial growth direction. Transmission electron microscopy (TEM) and high-resolution TEM (HRTEM) images showed that one-dimensional (Ga1-x Mnx) N nanorods without defects had c -axis-oriented crystalline wurzite structures. Atomic arrangements for the (Ga1-x Mnx) N nanorods grown on the Al2 O3 (0001) substrates are described on the basis of the XRD, the TEM, the SADP, and the HRTEM results.

Original language	English
Article number	141919
Journal	Applied Physics Letters
Volume	92
Issue number	14
DOIs	https://doi.org/10.1063/1.2902321
State	Published - 2008

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title = "Atomic arrangements of (Ga1-x Mnx) N nanorods grown on Al2 O3 substrates",

abstract = "X-ray diffraction (XRD) and selected area electron diffraction pattern (SADP) results showed that the (Ga1-x Mnx) N nanorods had preferential c -axial growth direction. Transmission electron microscopy (TEM) and high-resolution TEM (HRTEM) images showed that one-dimensional (Ga1-x Mnx) N nanorods without defects had c -axis-oriented crystalline wurzite structures. Atomic arrangements for the (Ga1-x Mnx) N nanorods grown on the Al2 O3 (0001) substrates are described on the basis of the XRD, the TEM, the SADP, and the HRTEM results.",

author = "Lee, {K. H.} and Lee, {J. Y.} and Jung, {J. H.} and Kim, {T. W.} and Jeon, {H. C.} and Kang, {T. W.}",

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doi = "10.1063/1.2902321",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

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T1 - Atomic arrangements of (Ga1-x Mnx) N nanorods grown on Al2 O3 substrates

AU - Lee, K. H.

AU - Lee, J. Y.

AU - Jung, J. H.

AU - Kim, T. W.

AU - Jeon, H. C.

AU - Kang, T. W.

PY - 2008

Y1 - 2008

N2 - X-ray diffraction (XRD) and selected area electron diffraction pattern (SADP) results showed that the (Ga1-x Mnx) N nanorods had preferential c -axial growth direction. Transmission electron microscopy (TEM) and high-resolution TEM (HRTEM) images showed that one-dimensional (Ga1-x Mnx) N nanorods without defects had c -axis-oriented crystalline wurzite structures. Atomic arrangements for the (Ga1-x Mnx) N nanorods grown on the Al2 O3 (0001) substrates are described on the basis of the XRD, the TEM, the SADP, and the HRTEM results.

AB - X-ray diffraction (XRD) and selected area electron diffraction pattern (SADP) results showed that the (Ga1-x Mnx) N nanorods had preferential c -axial growth direction. Transmission electron microscopy (TEM) and high-resolution TEM (HRTEM) images showed that one-dimensional (Ga1-x Mnx) N nanorods without defects had c -axis-oriented crystalline wurzite structures. Atomic arrangements for the (Ga1-x Mnx) N nanorods grown on the Al2 O3 (0001) substrates are described on the basis of the XRD, the TEM, the SADP, and the HRTEM results.

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DO - 10.1063/1.2902321

M3 - Article

AN - SCOPUS:42149166727

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 141919

ER -

Atomic arrangements of (Ga1-x Mnx) N nanorods grown on Al2 O3 substrates

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