Abstract
The effect of Al2O3 mixing in HfO2 on the electrical properties was studied on InP substrates using nanolaminate films grown by atomic layer deposition. The In out-diffusion and the subsequent In-related oxide phase generation were effectively suppressed by introducing more Al2O3 to the HfO2 film. Although the decrease in the maximum capacitance was taken into consideration, more Al 2O3 introduction significantly improved the dielectric properties. The magnitude of the capacitance-voltage frequency dispersion was decreased with the reduced border trap and interface state densities. Additionally, the leakage current characteristics were improved, including the voltage-stress-dependent reliability.
Original language | English |
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Article number | 275301 |
Journal | Journal Physics D: Applied Physics |
Volume | 46 |
Issue number | 27 |
DOIs | |
State | Published - 10 Jul 2013 |