Atomic Layer Deposited SiOX-Based Resistive Switching Memory for Multi-Level Cell Storage

Yewon Lee; Jiwoong Shin; Giyeong Nam; Daewon Chung; Sungjoon Kim; Joonhyeon Jeon; Sungjun Kim

doi:10.3390/met12081370

Atomic Layer Deposited SiO_X-Based Resistive Switching Memory for Multi-Level Cell Storage

Yewon Lee, Jiwoong Shin, Giyeong Nam, Daewon Chung, Sungjoon Kim, Joonhyeon Jeon, Sungjun Kim

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Herein, stable resistive switching characteristics are demonstrated in an atomic-layer-deposited SiO_X-based resistive memory device. The thickness and chemical properties of the Pt/SiO_X/TaN stack are verified by transmission electron microscopy (TEM) and X-ray photoemission spectroscopy (XPS). It is demonstrated that much better resistive switching is obtained using a negative set and positive reset compared to the opposite polarity. In addition, multi-level switching is demonstrated by changing the compliance current (CC) and the reset stop voltage, and potentiation and depression are emulated by applying pulses to achieve a synaptic device. Finally, a pulse endurance of 10,000 cycles and a retention time of 5000 s are confirmed by modulating the pulse input and reading voltage, respectively.

Original language	English
Article number	1370
Journal	Metals
Volume	12
Issue number	8
DOIs	https://doi.org/10.3390/met12081370
State	Published - Aug 2022

Keywords

memristor
resistive switching
silicon oxide
synaptic devices

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10.3390/met12081370

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title = "Atomic Layer Deposited SiOX-Based Resistive Switching Memory for Multi-Level Cell Storage",

abstract = "Herein, stable resistive switching characteristics are demonstrated in an atomic-layer-deposited SiOX-based resistive memory device. The thickness and chemical properties of the Pt/SiOX/TaN stack are verified by transmission electron microscopy (TEM) and X-ray photoemission spectroscopy (XPS). It is demonstrated that much better resistive switching is obtained using a negative set and positive reset compared to the opposite polarity. In addition, multi-level switching is demonstrated by changing the compliance current (CC) and the reset stop voltage, and potentiation and depression are emulated by applying pulses to achieve a synaptic device. Finally, a pulse endurance of 10,000 cycles and a retention time of 5000 s are confirmed by modulating the pulse input and reading voltage, respectively.",

keywords = "memristor, resistive switching, silicon oxide, synaptic devices",

author = "Yewon Lee and Jiwoong Shin and Giyeong Nam and Daewon Chung and Sungjoon Kim and Joonhyeon Jeon and Sungjun Kim",

note = "Publisher Copyright: {\textcopyright} 2022 by the authors.",

year = "2022",

month = aug,

doi = "10.3390/met12081370",

language = "English",

volume = "12",

journal = "Metals",

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TY - JOUR

T1 - Atomic Layer Deposited SiOX-Based Resistive Switching Memory for Multi-Level Cell Storage

AU - Lee, Yewon

AU - Shin, Jiwoong

AU - Nam, Giyeong

AU - Chung, Daewon

AU - Kim, Sungjoon

AU - Jeon, Joonhyeon

AU - Kim, Sungjun

PY - 2022/8

Y1 - 2022/8

N2 - Herein, stable resistive switching characteristics are demonstrated in an atomic-layer-deposited SiOX-based resistive memory device. The thickness and chemical properties of the Pt/SiOX/TaN stack are verified by transmission electron microscopy (TEM) and X-ray photoemission spectroscopy (XPS). It is demonstrated that much better resistive switching is obtained using a negative set and positive reset compared to the opposite polarity. In addition, multi-level switching is demonstrated by changing the compliance current (CC) and the reset stop voltage, and potentiation and depression are emulated by applying pulses to achieve a synaptic device. Finally, a pulse endurance of 10,000 cycles and a retention time of 5000 s are confirmed by modulating the pulse input and reading voltage, respectively.

AB - Herein, stable resistive switching characteristics are demonstrated in an atomic-layer-deposited SiOX-based resistive memory device. The thickness and chemical properties of the Pt/SiOX/TaN stack are verified by transmission electron microscopy (TEM) and X-ray photoemission spectroscopy (XPS). It is demonstrated that much better resistive switching is obtained using a negative set and positive reset compared to the opposite polarity. In addition, multi-level switching is demonstrated by changing the compliance current (CC) and the reset stop voltage, and potentiation and depression are emulated by applying pulses to achieve a synaptic device. Finally, a pulse endurance of 10,000 cycles and a retention time of 5000 s are confirmed by modulating the pulse input and reading voltage, respectively.

KW - memristor

KW - resistive switching

KW - silicon oxide

KW - synaptic devices

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U2 - 10.3390/met12081370

DO - 10.3390/met12081370

M3 - Article

AN - SCOPUS:85137797357

SN - 2075-4701

VL - 12

JO - Metals

JF - Metals

IS - 8

M1 - 1370

ER -

Atomic Layer Deposited SiO_X-Based Resistive Switching Memory for Multi-Level Cell Storage

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