Atomic layer deposited (TiO 2) x(Al 2O 3) 1-x/In 0.53Ga 0.47As gate stacks for III-V based metal-oxide-semiconductor field-effect transistor applications

C. Mahata; S. Mallik; T. Das; C. K. Maiti; G. K. Dalapati; C. C. Tan; C. K. Chia; H. Gao; M. K. Kumar; S. Y. Chiam; H. R. Tan; H. L. Seng; D. Z. Chi; E. Miranda

doi:10.1063/1.3684803

Atomic layer deposited (TiO ₂) _x(Al ₂O ₃) _1-x/In _0.53Ga _0.47As gate stacks for III-V based metal-oxide-semiconductor field-effect transistor applications

C. Mahata, S. Mallik, T. Das, C. K. Maiti, G. K. Dalapati, C. C. Tan, C. K. Chia, H. Gao, M. K. Kumar, S. Y. Chiam, H. R. Tan, H. L. Seng, D. Z. Chi, E. Miranda

Department of Electronics & Electrical Engineering

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

Atomic layer deposited (ALD) (TiO ₂) _x(Al ₂O ₃) _1-x(TiAlO) alloy gate dielectrics on In _0.47Ga _0.53As/InP substrates are shown to produce high quality interfaces between TiAlO and InGaAs. The surface morphology and interfacial reaction of nanolaminate ALD TiAlO on In _0.53Ga _0.47As are studied using atomic force microscopy and x-ray photoelectron spectroscopy. Measured valence and conduction band offsets are found to be 2.85 ± 0.05 and 1.25 ± 0.05 eV, respectively. Capacitance-voltage characteristics show low frequency dispersion (∼11), interface state density (∼4.2 × 10 ¹¹cm ^-2eV ^-1), and hysteresis voltage (∼90 mV). Ga-O and As-O bonding are found to get suppressed in the gate stacks after post deposition annealing. Our experimental results suggest that higher oxidation states of In and Ga at the In _0.53Ga _0.47As surface and As diffusion in the dielectric are effectively controlled by Ti incorporation in Al ₂O ₃.

Original language	English
Article number	062905
Journal	Applied Physics Letters
Volume	100
Issue number	6
DOIs	https://doi.org/10.1063/1.3684803
State	Published - 6 Feb 2012

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Mahata, C., Mallik, S., Das, T., Maiti, C. K., Dalapati, G. K., Tan, C. C., Chia, C. K., Gao, H., Kumar, M. K., Chiam, S. Y., Tan, H. R., Seng, H. L., Chi, D. Z., & Miranda, E. (2012). Atomic layer deposited (TiO ₂) _x(Al ₂O ₃) _1-x/In _0.53Ga _0.47As gate stacks for III-V based metal-oxide-semiconductor field-effect transistor applications. Applied Physics Letters, 100(6), Article 062905. https://doi.org/10.1063/1.3684803

@article{50e7c92992af4ace8f13f3d98e3d3c20,

title = "Atomic layer deposited (TiO 2) x(Al 2O 3) 1-x/In 0.53Ga 0.47As gate stacks for III-V based metal-oxide-semiconductor field-effect transistor applications",

abstract = "Atomic layer deposited (ALD) (TiO 2) x(Al 2O 3) 1-x(TiAlO) alloy gate dielectrics on In 0.47Ga 0.53As/InP substrates are shown to produce high quality interfaces between TiAlO and InGaAs. The surface morphology and interfacial reaction of nanolaminate ALD TiAlO on In 0.53Ga 0.47As are studied using atomic force microscopy and x-ray photoelectron spectroscopy. Measured valence and conduction band offsets are found to be 2.85 ± 0.05 and 1.25 ± 0.05 eV, respectively. Capacitance-voltage characteristics show low frequency dispersion (∼11), interface state density (∼4.2 × 10 11cm -2eV -1), and hysteresis voltage (∼90 mV). Ga-O and As-O bonding are found to get suppressed in the gate stacks after post deposition annealing. Our experimental results suggest that higher oxidation states of In and Ga at the In 0.53Ga 0.47As surface and As diffusion in the dielectric are effectively controlled by Ti incorporation in Al 2O 3.",

author = "C. Mahata and S. Mallik and T. Das and Maiti, {C. K.} and Dalapati, {G. K.} and Tan, {C. C.} and Chia, {C. K.} and H. Gao and Kumar, {M. K.} and Chiam, {S. Y.} and Tan, {H. R.} and Seng, {H. L.} and Chi, {D. Z.} and E. Miranda",

year = "2012",

month = feb,

day = "6",

doi = "10.1063/1.3684803",

language = "English",

volume = "100",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "6",

}

Mahata, C, Mallik, S, Das, T, Maiti, CK, Dalapati, GK, Tan, CC, Chia, CK, Gao, H, Kumar, MK, Chiam, SY, Tan, HR, Seng, HL, Chi, DZ & Miranda, E 2012, 'Atomic layer deposited (TiO ₂) _x(Al ₂O ₃) _1-x/In _0.53Ga _0.47As gate stacks for III-V based metal-oxide-semiconductor field-effect transistor applications', Applied Physics Letters, vol. 100, no. 6, 062905. https://doi.org/10.1063/1.3684803

TY - JOUR

T1 - Atomic layer deposited (TiO 2) x(Al 2O 3) 1-x/In 0.53Ga 0.47As gate stacks for III-V based metal-oxide-semiconductor field-effect transistor applications

AU - Mahata, C.

AU - Mallik, S.

AU - Das, T.

AU - Maiti, C. K.

AU - Dalapati, G. K.

AU - Tan, C. C.

AU - Chia, C. K.

AU - Gao, H.

AU - Kumar, M. K.

AU - Chiam, S. Y.

AU - Tan, H. R.

AU - Seng, H. L.

AU - Chi, D. Z.

AU - Miranda, E.

PY - 2012/2/6

Y1 - 2012/2/6

N2 - Atomic layer deposited (ALD) (TiO 2) x(Al 2O 3) 1-x(TiAlO) alloy gate dielectrics on In 0.47Ga 0.53As/InP substrates are shown to produce high quality interfaces between TiAlO and InGaAs. The surface morphology and interfacial reaction of nanolaminate ALD TiAlO on In 0.53Ga 0.47As are studied using atomic force microscopy and x-ray photoelectron spectroscopy. Measured valence and conduction band offsets are found to be 2.85 ± 0.05 and 1.25 ± 0.05 eV, respectively. Capacitance-voltage characteristics show low frequency dispersion (∼11), interface state density (∼4.2 × 10 11cm -2eV -1), and hysteresis voltage (∼90 mV). Ga-O and As-O bonding are found to get suppressed in the gate stacks after post deposition annealing. Our experimental results suggest that higher oxidation states of In and Ga at the In 0.53Ga 0.47As surface and As diffusion in the dielectric are effectively controlled by Ti incorporation in Al 2O 3.

AB - Atomic layer deposited (ALD) (TiO 2) x(Al 2O 3) 1-x(TiAlO) alloy gate dielectrics on In 0.47Ga 0.53As/InP substrates are shown to produce high quality interfaces between TiAlO and InGaAs. The surface morphology and interfacial reaction of nanolaminate ALD TiAlO on In 0.53Ga 0.47As are studied using atomic force microscopy and x-ray photoelectron spectroscopy. Measured valence and conduction band offsets are found to be 2.85 ± 0.05 and 1.25 ± 0.05 eV, respectively. Capacitance-voltage characteristics show low frequency dispersion (∼11), interface state density (∼4.2 × 10 11cm -2eV -1), and hysteresis voltage (∼90 mV). Ga-O and As-O bonding are found to get suppressed in the gate stacks after post deposition annealing. Our experimental results suggest that higher oxidation states of In and Ga at the In 0.53Ga 0.47As surface and As diffusion in the dielectric are effectively controlled by Ti incorporation in Al 2O 3.

UR - http://www.scopus.com/inward/record.url?scp=84857211987&partnerID=8YFLogxK

U2 - 10.1063/1.3684803

DO - 10.1063/1.3684803

M3 - Article

AN - SCOPUS:84857211987

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 062905

ER -

Atomic layer deposited (TiO ₂) _x(Al ₂O ₃) _1-x/In _0.53Ga _0.47As gate stacks for III-V based metal-oxide-semiconductor field-effect transistor applications

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